InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio
InGaAs/GaAsP strain quantum well spatial light modulator with low voltage and high contrast ratio
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低电压高对比度InGaAs/GaAsP应变量子阱空间光调制器
DOI：
10.1016/j.ijleo.2018.12.123
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发表时间：
2019-04
期刊：
影响因子：
3.1
通讯作者：
Wang Lijun
中科院分区：
文献类型：
--
作者：
Li Yaobiao;Huang Youwen;Ning Yongqiang;Wang Lijun
报道了一种空间光调制器(SLM)，它由40对InGaAs/GaAs/GaAsP多量子阱(MQW)嵌入到由高反射背向分布布拉格反射器(DBR)和中等反射顶DBR组成的非对称法布里-珀罗(FP)腔中。FP腔的中心波长相对于多量子阱的发光峰有20 nm的红移。基于量子受限斯塔克效应(QCSE)，模拟了多量子阱的光吸收光谱与外加负电压之间的关系。制作了直径为3 mm的大面积自聚焦显微镜，在≃940 nm处显示了12：1的高对比度，仅有2 V的偏置。从理论和实验上分析了QCSE效应随外加电压的变化以及腔内谐振波长随入射角的变化。该设备有望提高系统性能，降低数据中心内快速出现的高速数据传输和短板到板互连的功耗。
We report a spatial light modulator (SLM) which consisted of 40 pairs of InGaAs/GaAs/GaAsP multiple-quantum wells (MQWs) that embedded in an asymmetric Fabry-Perot (FP) cavity formed by highly reflective back distributed Bragg reflectors (DBRs) and moderate reflective top DBRs. The center wavelength of FP cavity was designed to have a 20 nm redshift in comparison to the luminescence peaks of MQWs. The relationship between optical absorption spectrum of MQWs and the applied negative voltages was modeled based on the quantum-confined stark effect (QCSE). Large area SLMs with 3 mm diameter were fabricated, which exhibited a high contrast ratio of 12:1 at ≃940 nm with only 2 V bias. The QCSE effect varying with the applied voltage and the cavity resonant wavelength shifting with the incident angle were also analyzed theoretically and experimentally. The device is promising to improve system performance and reduce power consumption of fast emerging high-speed data transmission within data centers and short board to board interconnects.
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影响因子：
2.6
作者：
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通讯作者：
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影响因子：
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DOI：
10.1117/12.507768
发表时间：
2004-01
期刊：
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影响因子：
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作者：
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DOI：
10.1364/ofc.2017.w3g.6
发表时间：
2017-03
期刊：
2017 Optical Fiber Communications Conference and Exhibition (OFC)
影响因子：
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作者：
Alirio A Melgar-Evangelista;V. Thomas;J. Lavrencik;Siddharth J. Varughese;S. Ralph
通讯作者：
Alirio A Melgar-Evangelista;V. Thomas;J. Lavrencik;Siddharth J. Varughese;S. Ralph
DOI：
10.1117/12.582754
发表时间：
2004-12
期刊：
--
影响因子：
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作者：
M. Achour
通讯作者：
M. Achour