Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures via selective-area van der Waals epitaxy.
Mixed-dimensional InAs nanowire on layered molybdenum disulfide heterostructures via selective-area van der Waals epitaxy.
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DOI：
10.1039/d0na00768d
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发表时间：
2021-05-18
影响因子：
4.7
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中科院分区：
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垂直排列的III-V半导体纳米线（NWs）在二维（2D）范德华（vdW）纳米材料上的自组装允许集成具有独特性能的新型混合维纳米系统，用于光电和纳米电子器件应用。本文首次报道了InAs NWs在孤立的二维二硫化钼（MoS2）畴上的选择性面积vdW外延（SA-vdWE）。探索MOCVD生长参数空间（即V/III比、生长温度和金属有机前驱体和氢化物前驱体的总摩尔流量），以实现单个NWs在孤立的多层MoS2微板上的无模式定位，并具有一对一的nw -MoS2结构域放置。引入生长前聚赖氨酸表面处理是减缓沿三角形二硫化钼畴边缘的InAs成核和沿二维微板内部区域的NW生长的必要步骤。对最佳SA-vdWE条件下形成的NW晶体结构进行分析，发现纤锌矿与锌共混相的无序组合。观察到NW侧壁面状结构的转变，这是由于在轴向NW合成过程中同时径向过度生长造成的。轴向生长的InAs NW核心段和MoS2畴之间的共同晶格排列被描述为垂直NW生长的外延基础。提出了一种常见的InAs/MoS2亚晶格结构模型，该模型由沿[21 ā 1 ā]方向的三倍立方InAs单元格组成，沿MoS2六边形晶格的[101 ā 0]方向与Mo-Mo（或S-S）间距的14倍相应对齐。本文描述的SA-vdWE生长模式使混合维III-V-on-2D异质结构的可控混合集成成为光电子学、纳米电子学和量子使能技术中应用的新型纳米系统。垂直排列的III-V型半导体纳米线在二维范德华纳米材料上的自组装允许集成具有独特性能的新型混合维纳米系统，用于光电器件应用。
Self-assembly of vertically aligned III–V semiconductor nanowires (NWs) on two-dimensional (2D) van der Waals (vdW) nanomaterials allows for integration of novel mixed-dimensional nanosystems with unique properties for optoelectronic and nanoelectronic device applications. Here, selective-area vdW epitaxy (SA-vdWE) of InAs NWs on isolated 2D molybdenum disulfide (MoS2) domains is reported for the first time. The MOCVD growth parameter space (i.e., V/III ratio, growth temperature, and total molar flow rates of metalorganic and hydride precursors) is explored to achieve pattern-free positioning of single NWs on isolated multi-layer MoS2 micro-plates with one-to-one NW-to-MoS2 domain placement. The introduction of a pre-growth poly-l-lysine surface treatment is highlighted as a necessary step for mitigation of InAs nucleation along the edges of triangular MoS2 domains and for NW growth along the interior region of 2D micro-plates. Analysis of NW crystal structures formed under the optimal SA-vdWE condition revealed a disordered combination of wurtzite and zinc-blend phases. A transformation of the NW sidewall faceting structure is observed, resulting from simultaneous radial overgrowth during axial NW synthesis. A common lattice arrangement between axially-grown InAs NW core segments and MoS2 domains is described as the epitaxial basis for vertical NW growth. A model is proposed for a common InAs/MoS2 sub-lattice structure, consisting of three multiples of the cubic InAs unit cell along the [21̄1̄] direction, commensurately aligned with a 14-fold multiple of the Mo–Mo (or S–S) spacing along the [101̄0] direction of MoS2 hexagonal lattice. The SA-vdWE growth mode described here enables controlled hybrid integration of mixed-dimensional III–V-on-2D heterostructures as novel nanosystems for applications in optoelectronics, nanoelectronics, and quantum enabling technologies. Self-assembly of vertically aligned III–V semiconductor nanowires on two-dimensional van der Waals nanomaterials allows for integration of novel mixed-dimensional nanosystems with unique properties for optoelectronic device applications.
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