Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.
Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer.
复制标题
CZTSe薄膜太阳能电池背接触界面的改进：消除吸收层中的双层分布
DOI：
10.1002/advs.201700645
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发表时间：
2018-03
期刊：
影响因子：
--
通讯作者：
Sun Y
中科院分区：
文献类型：
--
作者：
Zhang Z;Yao L;Zhang Y;Ao J;Bi J;Gao S;Gao Q;Jeng MJ;Sun G;Zhou Z;He Q;Sun Y
金属前体硒化法制备的Cu 2SnZnSe 4（CZTSe）薄膜存在双层结构，这将降低Mo衬底与吸收层的背接触，从而抑制太阳能电池的性能。在这项工作中，完全消除了CZTSe薄膜的双层分布，并成功地抑制了MoSe 2界面层的形成。在Se和SnSex混合气氛下，采用电沉积法沉积CZTSe前驱体，并对其进行硒化处理，制备了CZTSe薄膜。发现CZTSe薄膜的双层分布是由于薄膜底部的ZnSe和Cu-Sn-Se相反应不充分所致。通过增加金属前驱体中Sn的含量，弥补了CZTSe分解过程中Sn的损失，促进了液态Cu_2Se的扩散，从而完全消除了双电层分布。所形成的薄膜的结晶是致密的，并且晶粒穿过整个膜而没有空隙。CZTSe和Mo之间没有形成明显的MoSe 2层。因此，太阳能电池的串联电阻显著降低至0.14 Ω cm 2，并且制备了效率为7.2%的CZTSe太阳能电池。
Double layer distribution exists in Cu2SnZnSe4 (CZTSe) thin films prepared by selenizing the metallic precursors, which will degrade the back contact of Mo substrate to absorber layer and thus suppressing the performance of solar cell. In this work, the double‐layer distribution of CZTSe film is eliminated entirely and the formation of MoSe2 interfacial layer is inhibited successfully. CZTSe film is prepared by selenizing the precursor deposited by electrodeposition method under Se and SnSex mixed atmosphere. It is found that the insufficient reaction between ZnSe and Cu‐Sn‐Se phases in the bottom of the film is the reason why the double layer distribution of CZTSe film is formed. By increasing Sn content in the metallic precursor, thus making up the loss of Sn because of the decomposition of CZTSe and facilitate the diffusion of liquid Cu2Se, the double layer distribution is eliminated entirely. The crystallization of the formed thin film is dense and the grains go through the entire film without voids. And there is no obvious MoSe2 layer formed between CZTSe and Mo. As a consequence, the series resistance of the solar cell reduces significantly to 0.14 Ω cm2 and a CZTSe solar cell with efficiency of 7.2% is fabricated.
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