Effect of dopant compensation on the performance of Czochralski silicon solar cells
Effect of dopant compensation on the performance of Czochralski silicon solar cells
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掺杂补偿对直拉硅太阳能电池性能的影响
DOI：
10.1016/j.solmat.2012.02.023
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发表时间：
2012-06
影响因子：
6.9
通讯作者：
Que, Duanlin1
中科院分区：
文献类型：
--
作者：
Xiao, Chengquan1;Yang, Deren1;Yu, Xuegong1;Wang, Peng1;Chen, Peng1;Que, Duanlin1
研究了硼（B）和磷（P）补偿对直拉硅太阳电池性能的影响。多数和少数载流子的迁移率显着降低的掺杂剂补偿。相应地，少数载流子扩散长度变小。补偿的硅太阳能电池显示出较弱的光谱响应，因此具有较低的短路电流。然而，开路电压可能会受到我们硅片中净掺杂浓度的影响。由于其较大的净掺杂浓度，可以从补偿的太阳能电池获得较高的开路电压。结果，补偿的太阳能电池可以具有与常规太阳能电池相同的效率。这表明，掺杂水平≤ 1017 cm-3的硅中的掺杂剂补偿对于提高太阳能电池效率不是一个严重的问题。研究结果对冶金级硅在高效率、低成本太阳能电池中的应用具有重要意义。
We have investigated the effect of boron (B) and phosphorus (P) compensation on the performance of Czochralski (CZ) silicon solar cells. Both majority and minority carrier mobilities are significantly reduced by the dopant compensation. Correspondingly, the minority carrier diffusion length becomes smaller. The compensated silicon solar cells show weaker spectral responses and therefore lower short-circuit current. However, the open-circuit voltage can be influenced by the net doping concentration in our silicon wafers. A higher open-circuit voltage could be obtained from the compensated solar cells due to its larger net doping concentration. As a result, the compensated solar cells could have the same efficiency as the conventional ones. It suggests that the dopant compensation in silicon with a doping level of ≤1017cm−3is not a serious issue for the improvement of solar cell efficiency. The results are of significance for the upgraded metallurgical grade silicon (UMG-Si) application in the fabrication of high efficiency and low-cost solar cells.
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影响因子：
3.2
作者：
J. Libal;Sara Novaglia;M. Acciarri;S. Binetti;R. Petres;J. Arumughan;R. Kopecek;A. Prokopenko
通讯作者：
J. Libal;Sara Novaglia;M. Acciarri;S. Binetti;R. Petres;J. Arumughan;R. Kopecek;A. Prokopenko
影响因子：
6.9
作者：
Y. Delannoy;C. Alemany;K.-I. Li;P. Proulx;C. Trassy
通讯作者：
Y. Delannoy;C. Alemany;K.-I. Li;P. Proulx;C. Trassy
DOI：
10.1049/ep.1970.0039
发表时间：
1970
期刊：
Electronics and Power
影响因子：
--
作者：
G. Pridham
通讯作者：
G. Pridham
影响因子：
6.3
作者：
J.C.S. Pires;J. Otubo;A.F.B. Braga;P. Mei
通讯作者：
J.C.S. Pires;J. Otubo;A.F.B. Braga;P. Mei
影响因子：
6.9
作者：
C. Alemany;C. Trassy;B. Pateyron;K.-I. Li;Y. Delannoy
通讯作者：
C. Alemany;C. Trassy;B. Pateyron;K.-I. Li;Y. Delannoy