Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.
Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors.
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DOI：
10.1038/srep01459
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发表时间：
2013
影响因子：
4.6
通讯作者：
Kim, Kinam
中科院分区：
文献类型：
--
作者：
Kim, Hyun-Suk;Jeon, Sang Ho;Park, Joon Seok;Kim, Tae Sang;Son, Kyoung Seok;Seon, Jong-Baek;Seo, Seok-Jun;Kim, Sun-Jae;Lee, Eunha;Chung, Jae Gwan;Lee, Hyungik;Han, Seungwu;Ryu, Myungkwan;Lee, Sang Yoon;Kim, Kinam
具有三维视觉效果的超清晰、大面积显示器代表了当前/未来显示器行业的大趋势。在硬件层面，这样的“梦幻”显示器需要更快的像素切换和更高的驱动电流，这反过来又需要具有高迁移率的薄膜晶体管（TFT）。诸如In-Ga-Zn-O的非晶氧化物半导体（AOS）准备实现这样的TFT，但是器件性能和在光照下的稳定性之间的权衡严重地限制了它们的可用性，这与由氧空位引起的受阻的电子-空穴复合有关。在这里，我们已经通过用氮取代ZnO中的氧来改善照明稳定性，这可以通过将价带提高到缺陷能级以上来使氧空位失活。实际上，在照明和电偏置下的稳定性上级先前的基于AOS的TFT。通过实现移动性和稳定性，人们高度期望当前的ZnON TFT将广泛应用于下一代平板显示器。
Ultra-definition, large-area displays with three-dimensional visual effects represent megatrend in the current/future display industry. On the hardware level, such a “dream” display requires faster pixel switching and higher driving current, which in turn necessitate thin-film transistors (TFTs) with high mobility. Amorphous oxide semiconductors (AOS) such as In-Ga-Zn-O are poised to enable such TFTs, but the trade-off between device performance and stability under illumination critically limits their usability, which is related to the hampered electron-hole recombination caused by the oxygen vacancies. Here we have improved the illumination stability by substituting oxygen with nitrogen in ZnO, which may deactivate oxygen vacancies by raising valence bands above the defect levels. Indeed, the stability under illumination and electrical bias is superior to that of previous AOS-based TFTs. By achieving both mobility and stability, it is highly expected that the present ZnON TFTs will be extensively deployed in next-generation flat-panel displays.
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影响因子：
64.8
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H
影响因子：
8.6
作者：
Agoston, Peter;Albe, Karsten;Puska, Martti J.
通讯作者：
Puska, Martti J.
影响因子：
64.8
作者：
Jansen, M;Letschert, HP
通讯作者：
Letschert, HP
影响因子：
2.1
作者：
Long, Run;Dai, Ying;Han, Shenghao
通讯作者：
Han, Shenghao
影响因子：
56.9
作者：
Nomura, K;Ohta, H;Hosono, H
通讯作者：
Hosono, H