Nonequilibrium phenomena in bilayer electron systems

Nonequilibrium phenomena in bilayer electron systems
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双层电子系统中的非平衡现象

DOI:
10.1103/physrevb.107.l041302
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发表时间:
2023
期刊:
影响因子:
3.7
通讯作者:
Shevyrin A
Shevyrin A
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Shevyrin A

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在这封信中,我们已经使用磁电容和磁阻测量研究的非平衡现象的GaAs/AlGaAs异质结的双层电子系统的基础上。磁场斜坡驱动双层电子系统失去平衡,导致磁阻滞后和尖峰。与磁阻不同,磁电容结果有趣地显示出滞后,即使两层都处于量子霍尔态。滞后现象伴随着层间电荷转移,但不平衡并不限于层间不平衡。结果表明,边-体不平衡可以作为迟滞现象出现的初始基础。此外,观察到的非平衡状态,其中的总,而不是个人,层密度确定的磁场和栅极电压的依赖关系。
In the present Letter, we have used magnetocapacitance and magnetoresistance measurements to investigate nonequilibrium phenomena in a bilayer electron system based on GaAs/AlGaAs heterostructures. The magnetic field ramping drives the bilayer electron system out of equilibrium, leading to magnetoresistance hysteresis and spikes. Unlike magnetoresistance, magnetocapacitance results intriguingly show hysteresis even when both layers are in the quantum Hall state. The hysteresis is accompanied by interlayer charge transfer, but the disequilibrium is not limited to interlayer imbalance. Results show that the edge-bulk imbalance can be the initial ground for the appearance of hysteresis. In addition, the nonequilibrium states are observed in which the total, rather than individual, layer densities determine the magnetic field and gate voltage dependencies.
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双层二维空穴气体系统中的分数量子霍尔效应。
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发表时间: 1996
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