Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films.
Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films.
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铁酸铋薄膜中铁电畴壁的动力学和操纵
DOI：
10.1093/nsr/nwz176
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发表时间：
2020-02
影响因子：
20.6
通讯作者：
Zhu J
中科院分区：
文献类型：
--
作者：
Xiao S;Jin Y;Lu X;Cheong SW;Li J;Li Y;Huang F;Zhu J
摘要铁电畴壁与畴壁的区别不仅在于它们的结晶对称性和离散对称性，而且还在于它们的电、磁和机械性质。虽然畴壁提供了在纳米尺度上调节物理性质的自由度，但相对较低的可控性阻碍了它们在纳米器件中的实际应用。利用压电响应力显微镜三维畴结构检测的优势，我们发现（001）BiFeO 3薄膜中3种畴壁（尾-尾、头-尾、头-头）的迁移率随外加电场的变化而变化。在低电压下，头-尾畴壁比其它畴壁更移动的，而在高电压下，尾-尾畴壁变得相当活跃并且具有相对长的平均长度。这是由于带电畴壁的高成核能和相对低的生长能。最后，我们展示了通过连续的电写入操作域壁，从而在良好的对齐的导电路径的设计，铺平了道路，其应用在先进的自旋电子，存储器和通信纳米器件。
Abstract Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls (tail-to-tail, head-to-tail, head-to-head) in (001) BiFeO3 films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.
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影响因子：
41.2
作者：
Baek, S. H.;Jang, H. W.;Eom, C. B.
通讯作者：
Eom, C. B.
氧空位对多铁性BiFeO3电子结构和线性光学响应影响的第一性原理研究
影响因子：
4
作者：
Ju, Sheng;Cai, Tian-Yi
通讯作者：
Cai, Tian-Yi
影响因子：
3.7
作者：
Meng, Qingping;Han, Myung-Geun;Zhu, Yimei
通讯作者：
Zhu, Yimei
外延 BiFeO3 薄膜中的导电尾对尾畴壁
影响因子：
4
作者：
Jin, Yaming;Xiao, Shuyu;Zhu, Jinsong
通讯作者：
Zhu, Jinsong
影响因子：
3.2
作者：
BERGER, L
通讯作者：
BERGER, L