Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arrays
Integration of niobium oxide-based resistive switching cells with different select properties into nanostructured cross-bar arrays
复制标题
将具有不同选择特性的氧化铌基电阻开关单元集成到纳米结构交叉阵列中
DOI：
10.1088/0268-1242/30/11/115014
复制
发表时间：
2015
影响因子：
1.9
通讯作者：
T. Mikolajick
中科院分区：
文献类型：
--
作者：
H. Wylezich;E. Reinhardt;S. Slesazeck;T. Mikolajick
研究和比较了具有不同底层物理机制的记忆器件在计算和存储应用的无源交叉棒阵列中的应用。不同形态的氧化铌基金属-绝缘体-金属结构表现出突发性的丝状电阻开关、丝状电阻开关以及阈值开关效应和模拟开关特性。发现初始电铸步骤，这是强制性的丝状电池，导致问题，如果没有单独的选择装置，确保内部电流的一致性应用。相比之下，基于模拟开关的单元形成自由，可以毫无困难地操作。因此，它们作为无源电路元件可能具有应用价值。
Memristive devices with different underlying physical mechanisms are investigated and compared with respect to their utilization in passive cross-bar arrays for computing and memory applications. Niobium oxide-based metal–insulator–metal structures in various configurations exhibit abrupt filamentary resistive switching, filamentary resistive switching together with a threshold switching effect and analog switching characteristics. It is found that the initial electroforming step, which is mandatory for filamentary cells, causes problems if no individual selector device ensuring internal current compliance is applied. In contrast, cells based on analog switching are forming free and could be operated without difficulty. Thus they might be of value for utilization as passive circuit elements.
影响因子：
1.7
作者：
H. Mähne;L. Berger;Dominik Martin;V. Klemm;S. Slesazeck;S. Jakschik;D. Rafaja;T. Mikolajick
通讯作者：
H. Mähne;L. Berger;Dominik Martin;V. Klemm;S. Slesazeck;S. Jakschik;D. Rafaja;T. Mikolajick
影响因子：
1.9
作者：
Maehne, H.;Wylezich, H.;Mikolajick, T.
通讯作者：
Mikolajick, T.