Energetic stability, electronic structure, and magnetism in Mn-doped silicon dilute magnetic semiconductors
Energetic stability, electronic structure, and magnetism in Mn-doped silicon dilute magnetic semiconductors
复制标题
锰掺杂硅稀磁半导体的能量稳定性、电子结构和磁性
DOI：
10.1103/physrevb.77.245211
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发表时间：
2008-06
影响因子：
3.7
通讯作者：
Wei, Shiqiang
中科院分区：
文献类型：
--
作者：
Yan, Wensheng;Pan, Zhiyun;Pei, Congjian;Jiang, Yong;Sun, Zhihu;Mai, Cong;Soldatov, A. V.;Zhang, Xinfeng;Liu, Qinghua;Wei, He;Wei, Shiqiang
First-principles study on the energetic stability, electronic structure, and magnetic coupling in Mn-doped silicon with various configurations has been performed systematically. The results show that the poly-Mn atoms prefer to aggregate in the Mn-doped silicon dilute magnetic semiconductor. It is found that the tetrahedral interstitial Mn $({\text{Mn}}_{T})$ atoms assemble together via an intervening substitutional Mn $({\text{Mn}}_{\text{Si}})$ ion, subsequently forming the generally favored ${\text{Mn}}_{T}{\text{-Mn}}_{\text{Si}}{\text{-Mn}}_{T}$-type complexes. The dominant $d\text{\ensuremath{-}}d$ exchange interactions between the ${\text{Mn}}_{\text{Si}}$ and ${\text{Mn}}_{T}$ make all Mn ions in the ${\text{Mn}}_{T}{\text{-Mn}}_{\text{Si}}{\text{-Mn}}_{T}$ structures interact ferromagnetically with each other.
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影响因子：
2.1
作者：
Y. H. Kwon;T. Kang;H. Cho;T. W. Kim
通讯作者：
Y. H. Kwon;T. Kang;H. Cho;T. W. Kim
影响因子：
3.7
作者：
Qinghua Liu;Zhihu Sun;Wensheng Yan;W. Zhong;Z. Pan;L. Hao;Shiqiang Wei
通讯作者：
Qinghua Liu;Zhihu Sun;Wensheng Yan;W. Zhong;Z. Pan;L. Hao;Shiqiang Wei
影响因子：
8.6
作者：
H. Kim;N. Kim;Chang-Soo Park;S. Yuldashev;T. Kang;K. Chung
通讯作者：
H. Kim;N. Kim;Chang-Soo Park;S. Yuldashev;T. Kang;K. Chung
影响因子：
3.7
作者：
WANG, Y;PERDEW, JP
通讯作者：
PERDEW, JP
影响因子：
3.7
作者：
K. Yu;W. Walukiewicz;T. Wojtowicz;I. Kuryliszyn;X. Liu;Y. Sasaki;J. Furdyna
通讯作者：
K. Yu;W. Walukiewicz;T. Wojtowicz;I. Kuryliszyn;X. Liu;Y. Sasaki;J. Furdyna