Self-magnetism induced large magnetoresistance at room temperature region in graphene nanocrystallited carbon film
Self-magnetism induced large magnetoresistance at room temperature region in graphene nanocrystallited carbon film
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石墨烯纳米晶碳膜室温区自磁诱导大磁阻
DOI：
10.1016/j.carbon.2016.11.009
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发表时间：
2017-02
期刊：
影响因子：
10.9
通讯作者：
Dongfeng Diao
中科院分区：
文献类型：
--
作者：
Chao Wang;Dongfeng Diao
我们报告了石墨烯纳米晶纯碳膜在 273 K 时具有超过 12% 的大正磁阻 (MR)。不同温度下的磁流变行为表明，低温磁流变来自载流子扩散散射，室温磁流变来自自旋排列效应。薄膜电阻和磁化强度的温度依赖性表明，当温度从 300 K 降低到 200 K 时，电传输过程发生从导电模式到半导体模式的转变，并且纳米晶结构表现出铁磁和反铁磁相互作用的竞争。大的室温MR归因于石墨烯层边缘处的自旋磁矩排列的铁磁序。
We report large positive magnetoresistance (MR) of over 12% at 273 K in graphene nanocrystallited pure carbon film. MR behaviors at different temperatures implied that low temperature MR was from carrier diffusive scattering and room temperature MR was from spin arrangement effect. Temperature dependences of the film resistance and magnetization recognized that as temperature decreased from 300 to 200 K, transitions occurred on the electrical transporting process from conductive mode to semi-conductive mode, and the nanocrystallited structure showed competition of ferromagnetic and antiferromagnetic interactions. The large room temperature MR was ascribed to the ferromagnetic order of spin magnetic moment arrangement at the of graphene layer edges.
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