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The Growth of Visible Wavelength Quaternary Semiconductors by Metalorganic Chemical Vapor Deposition (Electrical Engineering)

The Growth of Visible Wavelength Quaternary Semiconductors by Metalorganic Chemical Vapor Deposition (Electrical Engineering)
通过金属有机化学气相沉积生长可见波长四元半导体（电气工程）
批准号：
8406281
负责人：
James Coleman
金额：
$5.39万
依托单位：
University of Illinois at Urbana-Champaign
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
1985
资助国家：
美国
项目状态：
已结题
起止时间：
1985-07-01 至 1987-06-30
来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=8406281&HistoricalAwards=false
关键词：
GrowthVisibleWavelengthQuaternarySemiconductors

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中文摘要
翻译
可见光波长III-V半导体二极管激光器引起了人们的极大兴趣。研究内容包括金属有机化学气相沉积(MOCVD)生长III-V合金InGaPAs和InGaAlP以及利用这些材料研制可见光激光二极管。该项目包括三个步骤：In-和P-化合物MOCVD生长工艺的开发，在常见的GaAs衬底上生长的常规双异质结激光器的开发，以及量子阱异质结的初步开发。
英文摘要
There is a great deal of interest in visible wavelength III-V semiconductor diode lasers. The research involves study of the growth of the III-V alloys InGaPAs and InGaA1P by metalorganic chemical vapor deposition (MOCVD) and the development of visible laser diodes from these materials. This program involves three steps: development of the MOCVD growth process for In- and P-compounds, development of conventional double heterostructures lasers grown on commonly available GaAs substrate, and initial development of quantum well heterostructures.
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