A Novel Structure for 3-Dimensional Quantization in Semiconductor Diode Lasers

半导体二极管激光器三维量子化的新结构

• 批准号: 0821979
• 负责人: James Coleman
• 金额: $ 27万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-15 至 2013-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0821979&HistoricalAwards=false
• 关键词: Novel; Structure; Dimensional; Quantization; Semiconductor

The objective of this research is the understanding and development of a novel three-dimensional (3D) quantized semiconductor laser active layer design called the nanopore. The approach is to create the inverse of a quantum dot structure using a layer of lower energy material "a quantum well" that is perforated and has imbedded in it bits of higher bandgap material that are small enough and close enough together to introduce 3D quantization. Intellectual Merit: While conventional quantum dots can show very strong quantization effects, the dots are often sparse, weakly coupled, irregularly distributed, and variable in size. The nanopore structure addresses all of these issues and introduces additional intermediate design freedom "pore pattern and geometry" unavailable in other approaches. There is also evidence of some unexpected behavior in these structures, including a forbidden energy gap within the conduction and valence bands, which will be explored. The presence of an energy gap offers intriguing potential for terahertz frequency generation and emission.Broader Impacts: Carefully controlled 3D quantized behavior in semiconductor structures is critical to future nanoscale electronic and photonic devices. Therefore the success of this program can have transformative impact on the critical fields of electronic and photonic integrated circuits and systems. There is substantial involvement of undergraduates in this work, targeted toward the participation of underrepresented groups and a plan to "teach the teacher" involving at least one middle school teacher in this program each year to learn about research and develop lesson plans for their students.

本研究的目的是了解和开发一种称为纳米孔的新型三维（3D）量化半导体激光器有源层设计。该方法是使用一层较低能量材料“量子阱”来创建量子点结构的逆，该量子阱被穿孔并嵌入了足够小且足够接近以引入3D量子化的较高带隙材料的位。智力优势：虽然传统的量子点可以表现出非常强的量子化效应，但量子点通常是稀疏的、弱耦合的、不规则分布的，并且尺寸可变。纳米孔结构解决了所有这些问题，并引入了其他方法中不可用的额外的中间设计自由度“孔图案和几何形状”。在这些结构中也有一些意想不到的行为的证据，包括导带和价带内的禁能隙，这将被探索。能隙的存在为太赫兹频率的产生和发射提供了有趣的潜力。更广泛的影响：仔细控制半导体结构中的3D量子化行为对未来的纳米级电子和光子器件至关重要。因此，该计划的成功可能对电子和光子集成电路和系统的关键领域产生变革性影响。大学生大量参与这项工作，目标是让代表性不足的群体参与，并制定一项“教老师”计划，每年至少有一名中学教师参加这项计划，学习研究并为学生制定课程计划。