Nonlinear Modeling and Characterization of Gallium Arsenide Mesfets and Related Devices

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This research program focuses on modeling of nonlinear properties of submicron gate length microwave field effect transistors. Emphasis is on developing a new method of modeling nonequilibrium charge transport which uses velocity groups to solve the Boltzmann transport equations. Velocity groups allow the effects of individual scattering phenomena to be isolated, while relaxing the computational requirements of Monte Carlo solutions. An additional focus is to utilize these results to develop device models compatible with microwave circuit analysis programs. The potential application of these models to high electron mobility transistors will be considered. Access to the Boeing Supercomputer Center for 25 CPU hours in each of two years is provided.