Intraband Processes and New Device Concepts

带内流程和新设备概念

• 批准号: 8603075
• 负责人: Darryl Coon
• 金额: $ 14.04万
• 依托单位: University of Pittsburgh
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-09-01 至 1989-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8603075&HistoricalAwards=false
• 关键词: Intraband; Processes; New; Device; Concepts

The research project involves development of new semiconductor device concepts associated with intraband (as opposed to interband) processes, related device physics, and related infrared (IR) experiments. Devices include quantum well IR detectors and sources, as well as extrinsic silicon IR detectors employing unconventional modes of detection. Modeling will be carried out to decrease compositional control demands on previously proposed quantum well IR detector structures which offer the possibility of high quantum efficiency, narrow band detection and fewer materials problems than narrow gap long wavelength detectors like HgCdTe which employ interband transitions. Improvements in quantum well intraband transition photon sources will be studied. Near IR intraband quantum well devices require larger barrier heights and indirect gap materials. Compositionally simple (GaAs-AlAs) devices also involve indirect gap barriers. The effect of high indirect gap barriers on carrier dynamics will be examined as an extension of theoretical work already begun on the interaction of electrons and holes with barriers. That work includes the effect of lattice mismatch and will be extended to include the effect of strain.

该研究项目涉及与带内（而不是带间）工艺、相关器件物理和相关红外（IR）实验相关的新半导体器件概念的开发。 设备包括量子阱红外探测器和源，以及采用非常规检测模式的外在硅红外探测器。 我们将进行建模，以减少对先前提出的量子阱红外探测器结构的成分控制要求，与采用带间跃迁的 HgCdTe 等窄间隙长波长探测器相比，该结构提供高量子效率、窄带探测和更少的材料问题。 将研究量子阱带内跃迁光子源的改进。 近红外带内量子阱器件需要更大的势垒高度和间接带隙材料。 成分简单的（GaAs-AlAs）器件还涉及间接间隙势垒。 高间接能隙势垒对载流子动力学的影响将作为已经开始的电子和空穴与势垒相互作用理论工作的延伸进行研究。 这项工作包括晶格失配的影响，并将扩展到包括应变的影响。