Device Related Studies of Localized State Charge and Field Ionization in Semiconductors

半导体中局域电荷和场电离的器件相关研究

• 批准号: 8412427
• 负责人: Darryl Coon
• 金额: $ 3.79万
• 依托单位: University of Pittsburgh
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1984
• 资助国家: 美国
• 起止时间: 1984-11-01 至 1986-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8412427&HistoricalAwards=false
• 关键词: Device; Related; Studies; Localized; State

This research focuses on a class of semiconductor devices which employ localized state charge storage in cryogenic environments. The devices are based on quantum mechanical effects which can be extremely fast or extremely slow depending on the strength of applied electric fields. The proposed work builds upon research performed by the Principal Investigator in recent years.

这项研究的重点是一类在低温环境中采用局部状态电荷存储的半导体器件。 这些设备基于量子力学效应，根据施加电场的强度，量子力学效应可以极快或极慢。 拟议的工作建立在首席研究员近年来进行的研究的基础上。