An Experimental and Theoretical Study of Sub-Micron Indium Phosphide Transferred Electron Devices

亚微米磷化铟转移电子器件的实验和理论研究

• 批准号: 8603323
• 负责人: Melvin Shaw
• 金额: $ 3.25万
• 依托单位: Wayne State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1986
• 资助国家: 美国
• 起止时间: 1986-06-15 至 1987-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8603323&HistoricalAwards=false
• 关键词: Experimental; Theoretical; Study; Sub; Micron

We propose a continuation of our experimental and numerical studies of 2-terminal InP transferred electron devices (TED) into the regime where the devices have lengths less than 1.0 micron. Experimentally, we will measure the: 1) pulsed and cw pre and post-threshold current-voltage characteristics; 2) oscillatory response at frequencies between 100 and 150 Ghz; 3) amplification behavior at these frequencies; 4) temperature, bias and circuit dependence of these phenomena. Numerically, we will simulate the data via a direct solution of the Boltzmann transport equation. The research will impact the areas of hot electron injection, high frequency microwave devices, metal semiconductor contacts, and transport in sub-micron structures.

我们建议继续对 2 端 InP 转移电子器件 (TED) 进行实验和数值研究，进入器件长度小于 1.0 微米的范围。 通过实验，我们将测量： 1) 脉冲和连续波阈值前和后电流-电压特性； 2) 频率在 100 至 150 Ghz 之间的振荡响应； 3) 这些频率下的放大行为； 4) 这些现象与温度、偏置和电路的依赖性。 在数值上，我们将通过玻尔兹曼输运方程的直接解来模拟数据。 该研究将影响热电子注入、高频微波器件、金属半导体接触和亚微米结构传输等领域。