An Experimental and Theoretical Study of Sub-Micron Indium Phosphide Transferred Electron Devices

我们建议继续对2端InP转移电子器件（TED）进行实验和数值研究，使其长度小于1.0微米。实验上，我们将测量：1)脉冲和连续波阈值前后的电流-电压特性；2) 100 ~ 150ghz频率的振荡响应；3)各频率下的放大行为；4)这些现象的温度、偏置和电路依赖性。在数值上，我们将通过玻尔兹曼输运方程的直接解来模拟数据。该研究将影响热电子注入、高频微波器件、金属半导体接触和亚微米结构输运等领域。

We propose a continuation of our experimental and numerical studies of 2-terminal InP transferred electron devices (TED) into the regime where the devices have lengths less than 1.0 micron. Experimentally, we will measure the: 1) pulsed and cw pre and post-threshold current-voltage characteristics; 2) oscillatory response at frequencies between 100 and 150 Ghz; 3) amplification behavior at these frequencies; 4) temperature, bias and circuit dependence of these phenomena. Numerically, we will simulate the data via a direct solution of the Boltzmann transport equation. The research will impact the areas of hot electron injection, high frequency microwave devices, metal semiconductor contacts, and transport in sub-micron structures.