An Industry/University Cooperative Research Center for Advanced Electron Devices

德克萨斯大学阿灵顿分校正在建立一个工业/大学合作研究中心，研究砷化镓先进电子设备。该中心第一年的研究计划包括：(1)砷化镓FET的建模，(2)MESFET击穿/功率FET， (3) SAGUFET -自对准栅极下切FET，(4)欧姆触点，(5)半导体/微带元件，(6)YIG/MMIC振荡器，(7)大信号砷化镓功率MESFET模型。

An Industry/University Cooperative Research Center for Gallium Arsenide Advanced Electronic Devices is being initiated at the University of Texas-Arlington. The Center's reaearch program for the first year addresses: (1) the modelling of Gallium Arsenide FETS, (2) MESFET breakdown/power FETS, (3) SAGUFET - self-aligned gate undercut FET, (4) ohmic contacts, (5) semi-conductor/microstrip components, (6) YIG/MMIC oscillators, and (7) large-signal gallium arsendide power MESFET model.