Semiconductor Physical Electronics at Low Temperatures

研究半导体材料和器件在低温下的物理电子学。对各种半导体器件的载流子冻结随材料、杂质类型(n或p)、杂质种类、杂质浓度和温度的变化进行了理论和实验研究。我们将研究GaAs MESFET、Si MOSFET和CRYOFET的工作特性与温度的关系。CRYOFET具有与MOSFET非常相似的结构，但具有相同导电型源极和漏极的衬底。虽然它在室温下是一个低的线性电阻，但在低于载流子冻结温度(例如4.2K)的温度下，它的功能与MOSFET非常相似。

The physical electronics at low temperatures of semiconductor materials and devices will be studied. Included is a combined theoretical and experimental investigation of carrier freezeout for various semiconductor devices as a function of material, impurity type (n or p) and specie, impurity concentration and temperature. The temperature dependence of the operating characteristics of GaAs MESFET's, Si MOSFET's, and CRYOFET's will be investigated. A CRYOFET has structure much like that of a MOSFET but has substrate of the same conductivity type Source and Drain. While it is a low linear resistance at room temperature it functions much like a MOSFET at temperatures below that for carrier freezeout (e.g. 4.2 K).