Physical Electronics of Ultra-Thin Dielectrics for Nanoscaled Nonvolatile Semiconductor Memory Devices

9810923 White这项研究和教育计划致力于研究超薄、异质绝缘体、纳米结构中的量子电荷传输和存储，这些纳米结构应用于高密度、低功耗、低电压、非易失性半导体存储器(NVSM)、专用集成电路(ASIC)和低电压、低功耗、规模化的cmos电路。我们的研究集中在超薄介质中的电荷陷阱，结合新颖的测试结构和电荷泵浦实验来确定Si-SiO_2界面附近区域的空间和能量陷阱分布。采用独特的测试结构和仪器来测试规模化的新型SONOS非易失性存储器纳米结构在擦除和写入模式下的耐久性。在用于大规模CMOS器件的超薄介质的情况下，我们的研究涉及应力感生漏电流(SILC)和陷阱辅助隧道效应。PI的研究采用了先进的制造技术，如氮离子注入硅的RTA氧化，以及分析表征技术，如AFM和角度分辨XPS，以形成和分析这些超薄介质的空间和成分结构。上述研究将有助于理解超薄介质和先进半导体器件中的电荷陷阱，同时为规模化NVSM和CMOS器件提供强有力的教育计划。***

9810923 White This research and education program addresses the study of quantum charge transport and storage in ultra-thin, hetero-insulator, nanostructures for application in high density, low-power, low voltage, nonvolatile semiconductor memories (NVSM's), application specific integrated circuits (ASIC's) and low-voltage, low power, scaled CMOS circuits. Our studies focus on charge trapping in ultra-thin dielectrics with a combination of novel test structures and charge pumping experiments to determine the spatial and energetic trap distributions in the region near the Si-Si02 interface. Unique test structures and instrumentation are employed to examine the endurance of scaled novel SONOS nonvolatile memory nanostructures in their erase and write modes. In the case of ultra-thin dielectrics for scaled CMOS devices our research addresses stress-induced leakage currents (SILC) and trap-assisted tunneling. The PI's research employs advanced fabrication techniques, such as RTA oxidation of nitrogen implanted silicon, and analytical characterization techniques, such as AFM and angle-resolved XPS, to form and analyze the spatial and compositional structure of these ultra-thin dielectrics. The above research will lead to an understanding of charge trapping in ultra-thin dielectrics and advanced semiconductor devices while providing a strong educational program in scaled NVSM and CMOS devices. ***