Physical Electronics of Ultra-Thin Dielectrics for Nanoscaled Nonvolatile Semiconductor Memory Devices

9810923白色这个研究和教育计划解决了量子电荷传输和存储在超薄，异质绝缘体，纳米结构的高密度，低功耗，低电压，非易失性半导体存储器（NVSM的），专用集成电路（ASIC的）和低电压，低功耗，缩放CMOS电路的应用研究。 我们的研究集中在超薄SiO2中的电荷俘获，结合新颖的测试结构和电荷泵实验来确定Si-SiO2界面附近区域中的空间和能量陷阱分布。 采用独特的测试结构和仪器来研究缩放的新型SONOS非易失性存储器纳米结构在其擦除和写入模式下的耐久性。 在超薄CMOS器件的情况下，我们的研究解决了应力引起的漏电流（SILC）和陷阱辅助隧穿。 PI的研究采用了先进的制造技术，如氮注入硅的RTA氧化，以及分析表征技术，如AFM和角分辨XPS，以形成和分析这些超薄纳米晶的空间和成分结构。 上述研究将导致超薄半导体器件和先进半导体器件中的电荷捕获的理解，同时提供了一个强大的教育计划，在规模NVSM和CMOS器件。 ***

9810923 White This research and education program addresses the study of quantum charge transport and storage in ultra-thin, hetero-insulator, nanostructures for application in high density, low-power, low voltage, nonvolatile semiconductor memories (NVSM's), application specific integrated circuits (ASIC's) and low-voltage, low power, scaled CMOS circuits. Our studies focus on charge trapping in ultra-thin dielectrics with a combination of novel test structures and charge pumping experiments to determine the spatial and energetic trap distributions in the region near the Si-Si02 interface. Unique test structures and instrumentation are employed to examine the endurance of scaled novel SONOS nonvolatile memory nanostructures in their erase and write modes. In the case of ultra-thin dielectrics for scaled CMOS devices our research addresses stress-induced leakage currents (SILC) and trap-assisted tunneling. The PI's research employs advanced fabrication techniques, such as RTA oxidation of nitrogen implanted silicon, and analytical characterization techniques, such as AFM and angle-resolved XPS, to form and analyze the spatial and compositional structure of these ultra-thin dielectrics. The above research will lead to an understanding of charge trapping in ultra-thin dielectrics and advanced semiconductor devices while providing a strong educational program in scaled NVSM and CMOS devices. ***