PYI: Growth and Applications of Thin Epitaxial Semiconductor Layer for VLSI

PYI：超大规模集成电路薄外延半导体层的生长和应用

• 批准号: 8657227
• 负责人: James Sturm
• 金额: $ 31.2万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1987
• 资助国家: 美国
• 起止时间: 1987-06-01 至 1993-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8657227&HistoricalAwards=false
• 关键词: PYI; Growth; Applications; Thin; Epitaxial

The growth and device applications of ultra-thin epitaxial semiconductor layers will be investigated. Growth experiments will involve the application of the Limited Reaction Processing technique to minimize the thermal exposure of strained layers. The technique also allows for the in-situ growth of multiple layers of different composition. Such in-situ processing could be a crucial step in meeting the uniformity and yield requirements of future generations of VLSI technology. The use of vapor phase source gases also gives a process that has the potential to be easily scaled up for industry. The device experiments will exploit the material properties of these layers to develop new kinds of electronic and opto-electronic devices. Fundamental studies of the electronic properties of these layers, and their dependence on growth techniques, as well as actual device fabrication are planned. Initial experiments will be designed to explore the SiGe system and other silicon-based heterostructures.

超薄外延生长及其器件应用 将研究半导体层。 生长实验将 涉及有限反应处理技术的应用， 使应变层的热暴露最小化。 该技术还 允许原位生长多层不同的 混合物. 这种现场处理可能是会议的关键步骤， 未来几代超大规模集成电路的均匀性和成品率要求 技术. 气相源气体的使用还提供了一种方法， 有可能很容易在工业上扩大规模。 设备 实验将利用这些层的材料特性， 开发新型电子和光电器件。 这些层的电子性质的基础研究，以及 他们对生长技术的依赖，以及实际设备 已计划制造。 最初的实验将被设计为 探索SiGe系统和其他硅基异质结构。