Auger Analysis and Photoluminescence Equipment for Growth and Optical Properties of Atomic-Layer Scale SiGe Structures by Rapid Thermal Chemical Vapor Deposition

普林斯顿大学电气工程系将为俄歇电子能谱和光致发光实验购买设备。该设备支持的研究目标是开发新的半导体材料，这种材料可能有助于将发光元件集成到传统集成电路上。正在研究的材料是合金和硅和锗的多层结构，这些层可能只有一个原子层厚。这些层将使用气体源和适合大规模生产的快速加热过程来生长。还将研究以自限方式重复生长单原子层的过程。

The Department of Electrical Engineering at Princeton University will purchase equipment for Auger Electron Spectroscopy and photoluminescence experiments. The goal of the research supported by the equipment is to grow new semiconductor materials which may be useful for integrating light-emitting elements on conventional integrated circuits. The materials under investigation are alloys and multiple layer structures of silicon and germanium, the layers of which may be only one atomic layer thick. The layers will be grown using gas sources and a rapid heating process that is amenable to large scale manufacturing. A process to repeatedly grow single atomic layers in a self-limiting fashion will also be investigated.