Auger Analysis and Photoluminescence Equipment for Growth and Optical Properties of Atomic-Layer Scale SiGe Structures by Rapid Thermal Chemical Vapor Deposition

俄歇分析和光致发光设备通过快速热化学气相沉积实现原子层尺度 SiGe 结构的生长和光学性质

• 批准号: 9111934
• 负责人: James Sturm
• 金额: $ 7.58万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-11-15 至 1993-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9111934&HistoricalAwards=false
• 关键词: Auger; Analysis; Photoluminescence; Equipment; Growth

The Department of Electrical Engineering at Princeton University will purchase equipment for Auger Electron Spectroscopy and photoluminescence experiments. The goal of the research supported by the equipment is to grow new semiconductor materials which may be useful for integrating light-emitting elements on conventional integrated circuits. The materials under investigation are alloys and multiple layer structures of silicon and germanium, the layers of which may be only one atomic layer thick. The layers will be grown using gas sources and a rapid heating process that is amenable to large scale manufacturing. A process to repeatedly grow single atomic layers in a self-limiting fashion will also be investigated.

电机系 普林斯顿大学将购买设备， 俄歇电子能谱和 光致发光实验 的目标 由设备支持的研究将增长 可能有用的新半导体材料 用于将发光元件集成在 传统的集成电路。 的材料 正在研究的是合金和多层 硅和锗的结构， 其可以仅为一个原子层厚。 的 层将使用气体源和快速生长 适合大规模生产的加热过程 制造业 一个不断成长的过程 原子层在一个自我限制的方式也将是 研究了