Quantum Structures for Light-emitting Silicon-Germanium Optoelectronic Devices

发光硅锗光电器件的量子结构

• 批准号: 9203109
• 负责人: James Sturm
• 金额: $ 24万
• 依托单位: Princeton University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-09-01 至 1996-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9203109&HistoricalAwards=false
• 关键词: Quantum; Structures; Light; emitting; Silicon

A fundamental question in the silicon- germanium heterostructure field is the possibility of strong electrically-pumped light emission for light-emitting devices. Based on promising initial results, we propose to use the Rapid Thermal Chemical Vapor Deposition (RTCVD) growth technique to develop novel quantum material structures to increase the light-emission intensities in the silicon- germanium system. This RTCVD technique at Princeton has already demonstrated the first well-resolved bandedge light-emission from strained Si1-xGex quantum wells and superlattices, and also the first 1.3-um room- temperature electro-luminescence (LED's) in the Si1-xGex system. It is proposed to increase the quantum efficiencies of these initial results by examining the properties of carriers in ultra- thin quantum wells ( = 1 nm) and monolayer-scale superlattices grown by chemical vapor deposition (CVD). This work will focus on the growth and opto-electronic characterization of such structures, which have not previously been grown by CVD. Such growth will require an understanding of the initial stages of heteroepitaxy in column IV CVD, which will be studied through the use of Auger electron spectroscopy in the rapid thermal CVD reactor at Princeton. The ultimate goal will be a self-limiting atomic layer epitaxy process.

硅的一个基本问题- 锗异质结领域是 强电泵浦光的可能性 用于发光器件的发射。 基于 有希望的初步结果，我们建议使用 快速热化学气相沉积 （RTCVD）生长技术来开发新的 量子材料结构，以增加 硅中的发光强度， 锗系 RTCVD技术 已经证明了第一个 良好分辨的带边光发射， 应变Si 1-xGex量子威尔斯阱和 超晶格，也是第一个1.3微米的房间， 温度电致发光（LED） Si 1-xGex系统 建议增加量子 这些初始结果的效率， 检查超声波中载体的性质， 薄量子威尔斯（= 1 nm）和 单层超晶格生长 化学气相沉积（CVD）。 这项工作 将专注于光电的增长和 这些结构的特征， 以前没有通过CVD生长。 这种增长需要了解 柱状异质外延的初始阶段 IV CVD，将通过 俄歇电子能谱在 普林斯顿大学的快速热CVD反应器。 的 最终目标是一个自我限制的原子 层外延工艺。