Tailored Microstructures of Inhomogeneous Composite Materials for Very Thin Optoelectronic Devices

先前的研究表明，Ag-Si和Ag-Si薄膜 CuInSe_2复合材料可以产生独特的光学和良好的光学性能。 电输运性质，并且它们可用于构建 具有一些非常不寻常的特性的光电器件。 理论 对Ag-0-Cs S-1光电阴极的研究表明， 系统可以产生几倍光电量子产率（PQY 在1.5um的百分比，目前存在的东西没有实现 光电发射器 特别地，1 μ m厚的Ag-多晶Si复合物具有 在2.4、3.0、3.8、4.8、7.2和4.8处具有选择性吸收峰， l2 um，具有极大的吸收系数（10**3-10**4/cm-+） 在这些波长下相对于Si，与最近的 制定动态有效介质近似（DEMA）， 描述这些系统。 这些复合材料的霍尔迁移率 425 cm 2/（伏-秒）是n型，电阻率在 10**6至10**-3ohm-cm，取决于Ag的体积分数。 的 这里的努力将是掺杂这些复合材料与明确定义的p-或n-， 类型的导电性，使他们在构建非常薄的有用 光电子器件.

A previous study indicated that thin films of Ag-Si and Ag- CuInSe2 composites may be produced with unique optical and good electrical transport properties and they may be used to construct optoelectronic devices with some very unusual properties. Theoretical studies of the Ag-0-Cs S-1 photocathode showed that a "tailored" Ag-0-Cs system could produce a photoelectric quantum yield (PQY) of a few percent at 1.5um, something not realized with presently existing photoemitters. In particular, Ag-polycrystalline Si composites 1um thick have been made with selective absorption peaks at 2.4, 3.0, 3.8, 4.8, 7.2 and l2um with extremely large absorption coefficients (10**3-10**4/cm-+) relative to Si at these wavelengths, in good agreement with a recently formulated dynamic effective medium approximation (DEMA) developed to describe these systems. These composites have measured Hall mobilities of 425cm2/ (volt-sec) are n-type with resistivities varying between 10**6 to 10**-3 ohm-cm depending upon the volume fraction of Ag. The effort here will be to dope these composites with well-defined p- or n- type conductivity to make them useful in constructing very thin optoelectronic devices.