Design and Development of a Novel CVD Reactor

PI计划建立和测试一种新的化学vagor 沉积（CVD）反应器，由五个部分组成， 矩形细胞 拟议中的反应堆完全不同 与目前使用的药物不同。 通过操作 反应器在低压下，恒定的停滞流体介质 将提供温度用于膜沉积， 浮力驱动的自由对流。 气源供应 因为沉积将通过扩散而不是强制 对流或流动流体。 实验工作将在 先看看反应堆是否可行 那么根据这个 原型，控制设计方程将被测试 广泛的操作条件和修改，以建立一个 可靠的设计关系。 一旦概念和 设计的新型反应器的基础上， 硅外延和多晶硅沉积，使用 将尝试用于超晶格膜生长的反应器。 超晶格结构之间具有非常尖锐的界面， 交替层将通过使用两个反应器生长 与沉积区并排， 走廊

The PI plans to build and test a novel chemical vagor deposition (CVD) reactor consisting of five parts in a rectangular cell. The proposed reactor is totally different from those presently in commerical use. By operating the reactor at a low pressure a stagnant fluid medium of constant temperature will be provided for film deposition in the absence of buoyancy-driven free convection. The supply of source gas for the deposition will be by diffusion rather than forced convection or flowing fluid. Experimental work will be done first to see if the reactor is viable. Then, based on this prototype the governing design equations will be tested over wide ranges of operating conditions and modified to establish a reliable set of design relationships. Once the concept and design of the novel reactor are demonstrated on the basis of silicon epitaxy and polysilicon deposition, the use of the reactor for superlattice film growth will be tried. Superlattice structures with very sharp interfaces between alternating layers will be grown by using two of the reactors side by side with the deposition zones interconnected by a corridor.