Design and Development of a Novel CVD Reactor

PI计划建造和测试一种新型的化学迷走神经沉积(CVD)反应器，该反应器由一个矩形单元中的五个部分组成。拟议中的反应堆与目前商业使用的反应堆完全不同。通过在低压力下运行，在没有浮力驱动的自由对流的情况下，将为薄膜沉积提供恒温的停滞流体介质。沉积的源气将通过扩散而不是强制对流或流动的流体提供。将首先进行实验工作，看看反应堆是否可行。然后，在这个原型的基础上，将在广泛的运行条件下测试控制设计方程，并对其进行修改，以建立一套可靠的设计关系。一旦在硅外延和多晶硅沉积的基础上论证了新型反应器的概念和设计，就可以尝试使用该反应器生长超晶格薄膜。交替层之间具有非常尖锐界面的超晶格结构将通过使用两个反应堆并排使用并通过走廊连接沉积区来生长。

The PI plans to build and test a novel chemical vagor deposition (CVD) reactor consisting of five parts in a rectangular cell. The proposed reactor is totally different from those presently in commerical use. By operating the reactor at a low pressure a stagnant fluid medium of constant temperature will be provided for film deposition in the absence of buoyancy-driven free convection. The supply of source gas for the deposition will be by diffusion rather than forced convection or flowing fluid. Experimental work will be done first to see if the reactor is viable. Then, based on this prototype the governing design equations will be tested over wide ranges of operating conditions and modified to establish a reliable set of design relationships. Once the concept and design of the novel reactor are demonstrated on the basis of silicon epitaxy and polysilicon deposition, the use of the reactor for superlattice film growth will be tried. Superlattice structures with very sharp interfaces between alternating layers will be grown by using two of the reactors side by side with the deposition zones interconnected by a corridor.