Design and Development of a Novel CVD Reactor

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The PI plans to build and test a novel chemical vagor deposition (CVD) reactor consisting of five parts in a rectangular cell. The proposed reactor is totally different from those presently in commerical use. By operating the reactor at a low pressure a stagnant fluid medium of constant temperature will be provided for film deposition in the absence of buoyancy-driven free convection. The supply of source gas for the deposition will be by diffusion rather than forced convection or flowing fluid. Experimental work will be done first to see if the reactor is viable. Then, based on this prototype the governing design equations will be tested over wide ranges of operating conditions and modified to establish a reliable set of design relationships. Once the concept and design of the novel reactor are demonstrated on the basis of silicon epitaxy and polysilicon deposition, the use of the reactor for superlattice film growth will be tried. Superlattice structures with very sharp interfaces between alternating layers will be grown by using two of the reactors side by side with the deposition zones interconnected by a corridor.