Output Intensity Limit of Semiconductor Lasers

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The phenomenon which limits the output intensity of semiconductor lasers is thermal runaway caused by nonradiative recombination at the laser mirror facet. One major objective of the proposed work is to develop a technique for removing the recombination centers and then stabilizing the surface with a thin passivating layer so that the centers are not regenerated. Possibly up to three orders of magnitude increase the maximum output intensity would be achieved if the surface could be made free of the nonradiative recombination centers. The other objective is to obtain a stability criterion for no thermal runaway in terms of active layer geometry and physical properties of other layers and heat sink. The criterion can be used to optimize for maximum output power. Achieving the two objectives could lead to a substantial increase in the maximum output intensity and could eliminate gradual degradation due to facet erosion.