Output Intensity Limit of Semiconductor Lasers

半导体激光器的输出强度极限

• 批准号: 8907873
• 负责人: Hong Lee
• 金额: --
• 依托单位: University of Florida
• 依托单位国家: 美国
• 项目类别: Continuing grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-08-15 至 1991-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8907873&HistoricalAwards=false
• 关键词: Output; Intensity; Limit; Semiconductor; Lasers

The phenomenon which limits the output intensity of semiconductor lasers is thermal runaway caused by nonradiative recombination at the laser mirror facet. One major objective of the proposed work is to develop a technique for removing the recombination centers and then stabilizing the surface with a thin passivating layer so that the centers are not regenerated. Possibly up to three orders of magnitude increase the maximum output intensity would be achieved if the surface could be made free of the nonradiative recombination centers. The other objective is to obtain a stability criterion for no thermal runaway in terms of active layer geometry and physical properties of other layers and heat sink. The criterion can be used to optimize for maximum output power. Achieving the two objectives could lead to a substantial increase in the maximum output intensity and could eliminate gradual degradation due to facet erosion.

限制输出强度的现象 半导体激光器的热失控是由 在激光反射镜端面的非辐射复合。 拟议工作的一个主要目标是发展 一种去除复合中心的技术， 然后用薄钝化层稳定表面， 这样中心就不会再生。 可能高达 三个数量级增加最大输出 如果表面可以被制成 没有非辐射复合中心。 的 另一个目的是获得一个稳定性准则，没有 在有源层几何形状方面的热失控， 其他层和散热器的物理特性。 的 标准可用于优化最大输出 动力. 实现这两个目标可能会导致 最大输出强度大幅增加， 可以消除由于刻面侵蚀而导致的逐渐退化。