A Simple High-Performance Avalanche Photodiode for Long- Wavelength Optical Communications

这项建议是为了继续非常成功的第一阶段工作， 优化独特的铟镓砷（InGaAs）结构 对于一种新颖的、简化的雪崩光电二极管（APD为1000-1700 nm光谱区域）。 第一阶段的工作表明，该结构可以 用于使击穿电压加倍，减少边缘击穿， 产生雪崩增益为3，漏电流为1 nA， 击穿电压 工作的InGaAs APD实际上是 气相外延（VPE） 计算机技术的发展是为了 模拟这些器件的电场行为（与S.R. USC的Forrest）。第二阶段的工作包括优化 “浮动”护环结构，可能包含新的“平板” 第一阶段的原始设备。 将对VPE进行优化， 产生较低的背景和较精细的n掺杂控制。 我们将提供 易于制造、增益超过10的10个器件工作 灵敏度低于-40 dBm。

This proposal is to continue the highly successful Phase I work for optimization of the unique indium gallium arsenide (InGaAs) structure for a novel, simplified avalanche photodiodes (APD for the 1000-1700 nm spectral region). The Phase I work showed that the structure could be used to double the breakdown voltage, reduce edge breakdown, produce avalanche gains of 3 and leakage currents of 1 nA at half the break down voltage. Working InGaAs APD's were actually fabricated with vapor phase epitaxy (VPE). Computer techniques were developed to model the electric field behavior of these devices (with Prof. S.R. Forrest of the USC). Phase II work includes optimization of the "floating" guard-ring structure, possibly incorporating a new "slab" structure into the original Phase I device. VPE will be refined to yield lower background and finer control of n-doping. We will deliver ten devices which are easy to fabricate, have gains beyond 10, operate at 2 GHz and have sensitivities below -40 dbm.