A Simple High-Performance Avalanche Photodiode for Long- Wavelength Optical Communications

这项提议是为了继续非常成功的第一阶段工作，以优化独特的In-GaAs(砷化铟)结构，用于新型、简化的雪崩光电二极管(1000-1700 nm光谱区域的雪崩光电二极管)。第一阶段的工作表明，该结构可以使击穿电压加倍，降低边缘击穿，在击穿电压减半时产生3的雪崩增益和1 nA的泄漏电流。工作中的InGaAs雪崩光电二极管实际上是用气相外延(VPE)制造的。计算机技术被开发来模拟这些器件的电场行为(与南加州大学的S.R.福雷斯特教授合作)。第二阶段的工作包括优化“浮动”保护环结构，可能在原有的第一阶段装置中加入一种新的“平板”结构。VPE将得到精炼，以产生更低的本底和更好的n掺杂控制。我们将提供10种易于制造、增益超过10、工作频率为2 GHz、灵敏度低于-40 dBM的器件。

This proposal is to continue the highly successful Phase I work for optimization of the unique indium gallium arsenide (InGaAs) structure for a novel, simplified avalanche photodiodes (APD for the 1000-1700 nm spectral region). The Phase I work showed that the structure could be used to double the breakdown voltage, reduce edge breakdown, produce avalanche gains of 3 and leakage currents of 1 nA at half the break down voltage. Working InGaAs APD's were actually fabricated with vapor phase epitaxy (VPE). Computer techniques were developed to model the electric field behavior of these devices (with Prof. S.R. Forrest of the USC). Phase II work includes optimization of the "floating" guard-ring structure, possibly incorporating a new "slab" structure into the original Phase I device. VPE will be refined to yield lower background and finer control of n-doping. We will deliver ten devices which are easy to fabricate, have gains beyond 10, operate at 2 GHz and have sensitivities below -40 dbm.