Strained Layer Avalanche Photodiodes for Long Wavelength Applications

适用于长波长应用的应变层雪崩光电二极管

• 批准号: 9461759
• 负责人: Gregory Olsen
• 金额: $ 6.43万
• 依托单位: Sensors Unlimited, Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-05-01 至 1996-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9461759&HistoricalAwards=false
• 关键词: Strained; Layer; Avalanche; Photodiodes; Long

9461759 Olsen In this SBIR Phase I Sensors Unlimited, Inc. explores the design and optimization of a high-performance avalanche photodiode for the 1.0-1.65 micron spectral region. The innovation uses strained epitaxial layers combined with multiquantum-well (MQW) InGaAsP/InP layers. A strained layer distorts the valence band of the multiplying (gain) region to reduce the field at which ionization occurs. This reduces device operating voltage and would also increase the ratio of hole/electron ionization coefficients (compared to the unstrained case) and thus decrease noise. A strained layer InGaAsP/InP MQW device will be constructed, and ionization coefficients will be measured and compared with the unstrained case. In Phase II, fabrication and optimization of a reliable planar structure for light response out to 1.65 micron are planned to explore the advantages of low voltage, low noise operation, high gain, and high yield.

9461759奥尔森在此SBIR第一阶段传感器无限探索设计和优化的高性能雪崩光电二极管的1.0-1.65微米光谱区域。这一创新使用应变外延层和多量子阱(MQW)InGaAsP/InP层相结合。应变层扭曲了倍增(增益)区的价带，从而降低了发生电离的电场。这降低了器件的工作电压，并且还将增加空穴/电子电离系数的比率(与无应变情况相比)，从而降低噪声。构建了应变层InGaAsP/InP多量子阱器件，测量了电离系数，并与无应变情况进行了比较。在第二阶段，计划制作和优化可靠的平面结构，以获得1.65微米的光响应，以探索低电压、低噪声操作、高增益和高成品率的优势。