Strained Layer Avalanche Photodiodes for Long Wavelength Applications

9461759 奥尔森 在这个SBIR阶段I传感器无限公司。探讨了1.0-1.65微米光谱区域的高性能雪崩光电二极管的设计和优化。 该创新使用应变外延层与多量子阱（MQW）InGaAsP/InP层相结合。 应变层使倍增（增益）区的价带变形以减小发生电离的场。 这降低了器件工作电压，并且还将增加空穴/电子电离系数的比率（与无应变的情况相比），从而降低噪声。 我们将制作一个应变层InGaAsP/InP多量子阱器件，并测量其电离系数，并与无应变情况进行比较。 在第二阶段，计划制造和优化一个可靠的平面结构，光响应到1.65微米，以探索低电压，低噪声操作，高增益和高产量的优点。

9461759 Olsen In this SBIR Phase I Sensors Unlimited, Inc. explores the design and optimization of a high-performance avalanche photodiode for the 1.0-1.65 micron spectral region. The innovation uses strained epitaxial layers combined with multiquantum-well (MQW) InGaAsP/InP layers. A strained layer distorts the valence band of the multiplying (gain) region to reduce the field at which ionization occurs. This reduces device operating voltage and would also increase the ratio of hole/electron ionization coefficients (compared to the unstrained case) and thus decrease noise. A strained layer InGaAsP/InP MQW device will be constructed, and ionization coefficients will be measured and compared with the unstrained case. In Phase II, fabrication and optimization of a reliable planar structure for light response out to 1.65 micron are planned to explore the advantages of low voltage, low noise operation, high gain, and high yield.