Raman and Other Optical Studies of Semiconductors

半导体的拉曼和其他光学研究

• 批准号: 8803108
• 负责人: Miles Klein
• 金额: $ 18.24万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-06-01 至 1991-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8803108&HistoricalAwards=false
• 关键词: Raman; Other; Optical; Studies; Semiconductors

Raman scattering will be studied from folded acoustic phonons, confined optical phonons, and interface optical phonons in Gallium Arsenide/Aluminum Arsenide and Gallium Arsenide/Aluminum Gallium Arsenide superlattices under conditions where the excited laser light is in resonance with various transitions from valence subbands to conduction subbands. These measurements will be supplemented by photoluminescence, photoluminescence excitation, photoreflectance, and spectroscopic ellipsometry measurements. Goals include understanding details of electronic structure and electron-phonon coupling resulting from valence-band mixing, electron-hole exchange interaction, and three-dimensional behavior of superlattice wave functions. Equipment will be assembled for real-time spectroscopic ellipsometry measurements on a sample growing inside a molecular beam epitaxy machine. Real time comparisons will be made between ellipsometry results and reflection high energy electron diffraction measurements. Goals include improved understanding of epitaxial growth processes, incorporation of ellipsometric results into feedback control of the growth, and achievement of higher quality samples.

本文将研究在砷化镓/砷化铝和砷化镓/砷化铝/砷化镓铝超晶格中，在激发的激光从价子带到导子带的各种跃迁共振条件下，折叠声声子、受限光学声子和界面光学声子的拉曼散射。这些测量将由光致发光、光致发光激发、光反射率和光谱椭偏测量来补充。目标包括了解电子结构和电子-声子耦合的细节，由价带混合，电子-空穴交换相互作用，以及超晶格波函数的三维行为。设备将装配用于实时光谱椭偏测量生长在分子束外延机内的样品。将对椭偏测量结果与反射高能电子衍射测量结果进行实时比较。目标包括提高对外延生长过程的理解，将椭偏结果纳入生长的反馈控制，以及获得更高质量的样品。