Engineering Research Equipment Grant: Network Analyzer for Laser Probe Measurement System (Supplement for Women, Minority and Handicapped Engineering Research Assistant)

这项工程研究设备补助金将支持主要专注于开发声学电荷传输(ACT)设备的实验研究，这是一项相对较新的技术。简而言之，ACT设备是由伊利诺伊大学的霍斯金斯和亨辛格于1982年发明的，本质上是一种电荷耦合设备(CCD)，其电荷包是通过随表面声波(SAW)传播的电位来传输的，而不是通过施加到表面电极的时钟脉冲施加的电位来传输。ACT器件的电荷转移效率为0.99994，带宽为200兆赫兹，这远远超过了ccd技术所能达到的水平。ACT是一种前景看好且可行的技术，迄今已被用于制造卷积器、相关器、滤波器和模拟存储器。其他可能的设备包括A/D转换器、阵列处理器、可编程过滤器和成像器。由于声波传输电荷，因此过滤器和其他ACT信号处理设备的抽头重量精度取决于设备设计者描述声束轮廓的能力。因此，声学在这项技术的出现和发展中起着至关重要的作用。本方案中要求的网络分析仪是激光测头测量系统的一部分，用于研究声表面波在压电半导体中的传播和产生以及与ACT器件性能有关的压电半导体异质结的细节。

This Engineering Research Equipment Grant will support experimental research focused primarily on the development of Acoustic Charge Transport (ACT) devices, a relatively new technology. Very briefly, the ACT device was invented at the University of Illinois by Hoskins and Hunsinger in 1982 and is essentially a Charge-Coupled Device (CCD) for which the charge packets are transported by the potential which propagates with a surface acoustic wave (SAW) instead of the potential imposed by clock pulses applied to surface electrodes. ACT devices with charge transfer efficiencies of 0.99994 and bandwidths of 200 MHz have been fabricated and this is well beyond what has been achieved with CCD technology. ACT is a promising and viable technology which has thus far been used to make convolvers, correlators, filters, and analog memories. Other potential devices included A/D converters, array processors, programmable filters and imagers. Because the acoustic wave transports the charge, tap weight accuracies for filters and other ACT signal processing devices depend on the ability of the device designer to describe the acoustic beam profile. As such, acoustics play a crucial role in the emergence and development of this technology. The network analyzer requested in this proposal is part of a laser probe measurement system to be used in studying the details of SAW propagation and generation in piezoelectric semiconductors and heterostructures of piezoelectric semiconductors as they pertain to the performance of ACT devices.