Kinetics of Growth of Ceramic Thin Films During Solid-State Formation and Oxidation Reactions in Oxides and Silicates

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The research is a continuation of research on the solid- state oxidation and solid-state formation reactions of multicomponent oxides and silicates. The solid-state oxidation research emphasizes the role of dislocation defects in the kinetics and atomic mechanisms of oxidation. Oxidation kinetics will be measured as a function of density of dislocations, oxygen chemical activity, temperature and time. The structure and growth of the oxidized region will be determined using optical and electron microscopy, and Rutherford backscattering spectroscopy. The oxidation process will modelled. The research on solid-state formation reactions will concentrate on the early stages of growth of the new crystal phases where the kinetics are interface-dominated rather than diffusion-dominated. The chemical reactions near the interface will be studied.