Kinetics of Growth of Ceramic Thin Films During Solid-State Formation and Oxidation Reactions in Oxides and Silicates

氧化物和硅酸盐中固态形成和氧化反应过程中陶瓷薄膜生长动力学

• 批准号: 8814654
• 负责人: David Kohlstedt
• 金额: --
• 依托单位: Cornell University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-03-15 至 1989-07-15
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8814654&HistoricalAwards=false
• 关键词: Kinetics; Growth; Ceramic; Thin; Films

The research is a continuation of research on the solid- state oxidation and solid-state formation reactions of multicomponent oxides and silicates. The solid-state oxidation research emphasizes the role of dislocation defects in the kinetics and atomic mechanisms of oxidation. Oxidation kinetics will be measured as a function of density of dislocations, oxygen chemical activity, temperature and time. The structure and growth of the oxidized region will be determined using optical and electron microscopy, and Rutherford backscattering spectroscopy. The oxidation process will modelled. The research on solid-state formation reactions will concentrate on the early stages of growth of the new crystal phases where the kinetics are interface-dominated rather than diffusion-dominated. The chemical reactions near the interface will be studied.

这项研究是对固体研究的继续- 固态氧化和固态生成反应 多组分氧化物和硅酸盐。 固态氧化 研究强调位错缺陷在 氧化动力学和原子机制。 氧化动力学 将被测量为位错密度、氧 化学活性温度和时间 结构和 氧化区域的生长将使用光学 电子显微镜和卢瑟福背散射 谱 将模拟氧化过程。 研究 固态形成反应将集中在早期 新晶体相的生长阶段，其中动力学是 界面主导而不是扩散主导。 的 将研究界面附近的化学反应。