Characteristic Methods on SIMD and MIMD Computers for Semi- Conductor Device Modeling and Their Application to the CAD of Microwave Devices

SIMD和MIMD计算机半导体器件建模的特征方法及其在微波器件CAD中的应用

• 批准号: 8821330
• 负责人: Thomas Russell
• 金额: $ 9万
• 依托单位: University of Colorado at Denver-Downtown Campus
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-06-01 至 1991-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8821330&HistoricalAwards=false
• 关键词: Characteristic; Methods; SIMD; MIMD; Computers

This project is concerned with theoretical and computational research in numerical methods for solving the nonlinear partial differential equations of semiconductor device modeling. The device model equations are mathematically similar to those appearing in flow of miscible fluid in a porous medium. Procedures making use of characteristics have been successfully employed in porous media flows and may be similarly utilized here so that efficient simulation techniques may eventually make interactive CAD of semiconductor devices a reality.

本项目致力于半导体器件建模中求解非线性偏微分方程组的数值方法的理论和计算研究。设备模型方程在数学上类似于在多孔介质中出现的混相流体流动中出现的方程。利用特征的程序已经成功地应用于多孔介质流动中，并且可以类似地在这里使用，从而有效的模拟技术最终可能使半导体器件的交互式CAD成为现实。