Characteristic Methods on SIMD and MIMD Computers for Semi- Conductor Device Modeling and Their Application to the CAD of Microwave Devices
Characteristic Methods on SIMD and MIMD Computers for Semi- Conductor Device Modeling and Their Application to the CAD of Microwave Devices
批准号:
8821330
负责人:
Thomas Russell
金额:
$9.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1989
资助国家:
美国
项目状态:
已结题
起止时间:
1989-06-01 至 1991-11-30
中文摘要
该项目涉及理论和 数值方法的计算研究 半导体非线性偏微分方程 设备建模 器件模型方程在数学上是 类似于在可混溶流体流动中出现的那些, 多孔介质 利用特征的程序有 已成功应用于多孔介质流动, 类似地在这里使用,使得有效的模拟技术 可能最终使半导体器件的交互式CAD成为 现实
英文摘要
This project is concerned with theoretical and computational research in numerical methods for solving the nonlinear partial differential equations of semiconductor device modeling. The device model equations are mathematically similar to those appearing in flow of miscible fluid in a porous medium. Procedures making use of characteristics have been successfully employed in porous media flows and may be similarly utilized here so that efficient simulation techniques may eventually make interactive CAD of semiconductor devices a reality.
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Materials Research Science and Engineering Center on Polymers
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资助金额:$814.0万
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负责人:Thomas Russell
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依托单位:
Mathematical Sciences Computing Research Environments
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资助金额:$5.0万
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财政年份:1995
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依托单位:
国内基金
海外基金
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依托单位: