Characteristic Methods on SIMD and MIMD Computers for Semi- Conductor Device Modeling and Their Application to the CAD of Microwave Devices

本项目涉及半导体器件建模中非线性偏微分方程数值求解方法的理论和计算研究。该装置模型方程在数学上类似于多孔介质中混相流体的流动方程。利用特性的程序已经成功地应用于多孔介质流中，并且可以在这里类似地使用，以便有效的模拟技术最终可以使半导体器件的交互式CAD成为现实。

This project is concerned with theoretical and computational research in numerical methods for solving the nonlinear partial differential equations of semiconductor device modeling. The device model equations are mathematically similar to those appearing in flow of miscible fluid in a porous medium. Procedures making use of characteristics have been successfully employed in porous media flows and may be similarly utilized here so that efficient simulation techniques may eventually make interactive CAD of semiconductor devices a reality.