US-France Cooperative Research: Electronic Properties of Hg-based Heterostructures Grown by Molecular Beam Epitaxy

美法合作研究：分子束外延生长的汞基异质结构的电子特性

• 批准号: 8914637
• 负责人: Jean-Pierre Faurie
• 金额: $ 1.17万
• 依托单位: University of Illinois at Chicago
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-04-01 至 1993-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8914637&HistoricalAwards=false
• 关键词: US; France; Cooperative; Research; Electronic

This award will support collaborative research in solid state physics between Dr. Jean-Pierre Faurie, University of Illinois at Chicago and Dr. Yves Guldner, Department of Physics, Ecole Normale Superieure, Paris, France. The objective of the project is the study of the electronic properties of Hg-based heterostructures grown by molecular beam epitaxy (MBE). The II-VI superlattices (SL's) fabricated with CdTe and zero-gap Hg-based compounds form a new class of heterostructures which are of great interest both fundamentally and technically. The Hg- based semi-conducting heterostructures are considered to be very important and are currently being intensively studied. These heterostructures have been termed "Type III heterostructures" because of the unique inverted band structures of the zero-gap material; in particular the mass reversal for the light particles occurring at each interface leads to the existence of quasi interference states. This distinctive feature contributes significantly to optical and transport properties of these structures. On the other hand, HgTe-CdTe SL's have been proposed as a new material for far infrared detection and they are now under consideration for infrared lasers and optical switching due to the large optical non-linearities observed in these SL's. In this research project, the investigators propose to grow and study two novel SL systems by using MBE as the growth technique and magneto-optical and magneto-transport as the characterization techniques. They also propose to grow by MBE and to study the resonant tunnelling and magneto-tunnelling through HgTe-CdTe double barrier structures. The project will benefit from the complementary expertise of the two investigators. Dr. Faurie is an internationally recognized leader in the area of modulated semiconductor structures grown by MBE. The French group is well recognized for its work on the electronic properties of semi- conductor based heterostructures, such as quantum wells, super- lattices and heterostructures with modulated doping.

该奖项将支持固态技术的合作研究 伊利诺伊大学的Jean-Pierre Faurie博士 芝加哥和伊夫·古尔冈博士，物理系，Ecole Normale 法国，巴黎，巴黎。 该项目的目标是 Hg基异质结电子性质的研究 通过分子束外延（MBE）生长。 用CdTe和零能隙制备的II-VI族超晶格 汞基化合物形成一类新的异质结构， 从根本上和技术上都有很大的兴趣。 汞- 基半导体异质结构被认为是非常 目前正在深入研究。 这些 异质结构被称为“III型异质结构”， 由于零能隙的独特的反向能带结构， 材料;特别是轻粒子的质量反转 在每个界面上发生的，导致存在准 干涉国。 这一独特的特征有助于 这对这些材料的光学和输运性质有重要影响 结构. 另一方面，已经提出了HgTe-CdTe SL 作为远红外探测的新材料， 考虑用于红外激光器和光学开关， 在这些SL中观察到的大的光学非线性。 在 在这个研究项目中，研究人员建议种植和研究 利用分子束外延生长技术， 磁光和磁输运作为表征 技术. 他们还建议通过MBE进行增长，并研究 HgTe-CdTe的共振隧穿和磁隧穿 双屏障结构。该项目将受益于 这是两名调查员的互补专长。 法里博士是 国际公认的调制解调器领域的领导者 通过MBE生长的半导体结构。 法国队很好 因其在半导体电子性质方面的工作而受到认可， 基于导体的异质结构，例如量子威尔斯、超 具有调制掺杂的晶格和异质结构。