Bulk Silicon Technologies for Microelectromechanical Systems

微机电系统体硅技术

• 批准号: 8915215
• 负责人: Khalil Najafi
• 金额: $ 58.82万
• 依托单位: Regents of the University of Michigan - Ann Arbor
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-09-01 至 1993-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8915215&HistoricalAwards=false
• 关键词: Bulk; Silicon; Technologies; Microelectromechanical; Systems

This research will explore the use of single-sided bulk- silicon process technology for the realization of microelectromechanical systems (MEMS). Efforts on fundamental materials characterization, the development of new microstructure formation techniques, and the development of generic modeling and simulation capabilities for MEMS will be conducted. Research results will be applied in the fabrication of two- and three-dimensional devices, including electrostatically driven linear micromotors, laterally driven resonant microstructures, and microvalves. One device that will be considered is a fully integrated scanning thermal profilometer (STP) that operates using laterally driven resonant structures fabricated from bulk silicon. The STP will incorporate an integrated polysilicon metal thermocouple for temperature measurement, a submicron silicon tip supporting the thermocouple, electrostatic drive mechanisms, and a chip-level package realized by stacking multiple silicon levels to protect the STP from particulates and physical damage. The technology resulting from this research should complement surface micromachining techniques to extend the field of MEMS and realize new structures.

本研究将探索利用单面体硅制程技术来实现微机电系统（MEMS）。将进行基本材料表征，开发新的微结构形成技术，以及开发用于MEMS的通用建模和仿真能力。研究成果将应用于二维和三维器件的制造，包括静电驱动的直线微电机、横向驱动的谐振微结构和微阀。将考虑的一种设备是完全集成的扫描热剖面仪（STP），它使用由大块硅制成的横向驱动谐振结构进行操作。STP将集成用于温度测量的集成多晶硅金属热电偶，支持热电偶的亚微米硅尖端，静电驱动机制，以及通过堆叠多个硅层实现的芯片级封装，以保护STP免受颗粒和物理损坏。本研究所产生的技术将补充表面微加工技术，以扩展MEMS领域并实现新结构。