Center for the Synthesis, Growth, and Analysis of Electronic Materials

该奖项将支持科学和技术中心， 电子材料的合成、生长和分析. 德克萨斯大学奥斯汀分校该研究计划的 中心分为两个推进区 半导体和硅基材料。在每次推力中 区域化学家将合成分子前体， 测定其表面和气相反应性，以及 工程师和物理学家将生长并分析 由这些前体制成的电子材料， 并测试用这些薄膜制成的新设备。 一个主要组成部分 的研究将是合成，纯化和表面 新型前体的反应性测量，含基团 III族和V族元素在一个单一的分子，具有低 毒性，适合于通过先进的OMCVD进行薄膜生长， CBE技术。 电子材料及其衍生的结构和器件 它们是众多先进技术的核心 具有战略和经济意义。通过 综合和合作研究计划，其中链接 科学家和工程师在大学与科学家和 桑迪亚国家实验室（Sandia National Laboratory），德州仪器（Texas Instruments） 股份有限公司、和摩托罗拉公司，该中心将发展和 展示电子材料、结构的新概念 和设备，这将导致更小，更快， 具有定制的光学和光学特性的高密度集成电子器件 电子特性

This award will support the Science and Technology Center for the Synthesis, Growth and Analysis of Electronic Materials at the University of Texas, Austin. The research program of the Center is organized into two thrust areas--compound semiconductors and silicon-based materials. Within each thrust area chemists will synthesize molecular precursors and determine their surface and gas phase reactivities, and engineers and physicists will grow and analyze thin films of electronic materials made from these precursors, and construct and test new devices made from these films. A major component of the research will be the synthesis, purification and surface reactivity measurements of novel precursors, containing group III and group V elements in a single molecule, that have low toxicity and are suitable for film growth by advanced OMCVD and CBE techniques. Electronic materials, and the structures and devices derived from them, lie at the heart of numerous advanced technologies that have strategic and economic relevance. Through an integrated and collaborative research program, which links scientists and engineers at the University with scientists and engineers at Sandia National Laboratory, Texas Instruments Inc., and Motorola Inc., the Center will develop and demonstrate new concepts for electronic materials, structures and devices, which will lead to smaller, faster and more densely integrated electronic devices with tailored optical and electronic properties.