Dissolution Inhibition in Positive Novolak Resists

正性酚醛清漆抗蚀剂是迄今为止最重要的图案化 系统的今天的半导体技术，但其功能 机制还不太清楚。 这项研究涉及一个 抵抗功能的机械模型，如果得到验证， 完成后，将为进一步 这些重要材料的技术发展。 最近研究表明，酚醛清漆在碱溶液中的溶解 由碱向固体中的扩散速率控制 聚合物的 现在建议电解质的扩散 进入酚醛清漆遵循由亲水中心限定的路径，即， 树脂的OH-基团，并避免疏水区域， 矩阵。 溶出抑制剂通过中断 这些亲水扩散通道。 建议验证 通过设计树脂的亲水扩散途径的概念 用不同浓度的酚，并以这种方式改变 分离亲水性位点并监测位点效应 稀释对溶出速率的影响。

Positive novolak resists are by far the most important patterning systems of today's semiconductor technology, yet their functional mechanism is not well understood. This research deals with a mechanistic model of resist function, which if validated and completed would provide a rational basis for the further technical development of these important materials. It was recently shown that novolak dissolution in aqueous alkali is controlled by the rate of diffusion of the base into the solid polymer. It is now suggested that diffusion of the electrolyte into novolak follows a path defined by hydrophilic centers i.e. the OH-groups of the resin, and avoids the hydrophobic regions of the matrix. Dissolution inhibitors function by interrupting these hydrophilic diffusion channels. It is proposed to validate the concept of hydrophilic diffusion pathways by designing resins with a varying concentration of phenols and in this way vary the separation of hydrophilic sites and monitor the effect of site dilution on dissolution rate.