Presidential Young Investigator: Growth of II-VI Compound Semiconductors Using Metalakyl Precursors.

研究了金属有机前驱体生长II-VI半导体的表面化学过程。其中涉及的问题包括表面反应的机制，反应中间体的结构，表面的催化性能，以及碳和其他杂质纳入生长膜的来源和影响。所采用的技术将包括热解吸光谱、光电子光谱和高分辨率电子能量损失光谱。最初的研究重点是在硅或砷化镓衬底上生长氧化锌、硫化锌和硫化镉，然后发展到这些材料的同外延生长以及碲化锌和碲化镉的生长。金属有机化学气相沉积（MOCVD）和化学束外延（CBE）是化合物半导体薄膜生长的重要工艺。在本研究中，研究了与这些方法应用于II-VI半导体薄膜生产相关的基本过程。这些特殊的半导体很重要，因为它们形成了光信号和电子信号相互转换的接口。

Surface chemical processes involved in the growth of II-VI semiconductors from organometallic precursors are studied. Among the issues addressed are mechanisms of surface reactions, structures of reaction intermediates, catalytic properties of the surface, and sources and impact of carbon and other impurities incorporated into the growing films. Techniques employed will include thermal desorption spectroscopy, photoelectron spectroscopy, and high-resolution electron energy-loss spectroscopy. Initial investigation focusses on the growth of zinc oxide, zinc sulfide, and cadmium sulfide on substrates of silicon or gallium arsenide, then progressing to homoepitaxial growth of these materials as well as growth of zinc telluride and cadmium telluride. Metal-organic chemical vapor deposition (MOCVD) and chemical beam epitaxy (CBE) are important processes for the growth of thin films of compound semiconductors. In this study, basic processes relevant to the application of these methods to the production of films of II-VI semiconductors are studied. These particular semiconductor are important because they form the interface that interconverts optical and electronic signals.