Presidential Young Investigator: Growth of II-VI Compound Semiconductors Using Metalakyl Precursors.

II-VI族生长中的表面化学过程 研究了来自有机金属前体的半导体。 所处理的问题包括表面的机制， 反应，反应中间体的结构，催化 表面的性质、碳的来源和影响 和其它杂质结合到生长的膜中。 所采用的技术将包括热解吸 光谱学、光电子能谱学和高分辨率 电子能量损失谱 初步调查 专注于氧化锌，硫化锌， 在硅或砷化镓衬底上的硫化镉， 然后进行这些材料的同质外延生长， 以及碲化锌和碲化镉的生长。 金属有机化学气相沉积（MOCVD）和化学气相沉积（CVD） 束外延（CBE）是生长 化合物半导体薄膜。 在这项研究中，基础 与将这些方法应用于 研究了II-VI族半导体薄膜的制备。 这些特殊的半导体是重要的，因为它们形成 光和电相互转换的接口 信号.

Surface chemical processes involved in the growth of II-VI semiconductors from organometallic precursors are studied. Among the issues addressed are mechanisms of surface reactions, structures of reaction intermediates, catalytic properties of the surface, and sources and impact of carbon and other impurities incorporated into the growing films. Techniques employed will include thermal desorption spectroscopy, photoelectron spectroscopy, and high-resolution electron energy-loss spectroscopy. Initial investigation focusses on the growth of zinc oxide, zinc sulfide, and cadmium sulfide on substrates of silicon or gallium arsenide, then progressing to homoepitaxial growth of these materials as well as growth of zinc telluride and cadmium telluride. Metal-organic chemical vapor deposition (MOCVD) and chemical beam epitaxy (CBE) are important processes for the growth of thin films of compound semiconductors. In this study, basic processes relevant to the application of these methods to the production of films of II-VI semiconductors are studied. These particular semiconductor are important because they form the interface that interconverts optical and electronic signals.