Presidential Young Investigator: Growth of II-VI Compound Semiconductors Using Metalakyl Precursors.

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Surface chemical processes involved in the growth of II-VI semiconductors from organometallic precursors are studied. Among the issues addressed are mechanisms of surface reactions, structures of reaction intermediates, catalytic properties of the surface, and sources and impact of carbon and other impurities incorporated into the growing films. Techniques employed will include thermal desorption spectroscopy, photoelectron spectroscopy, and high-resolution electron energy-loss spectroscopy. Initial investigation focusses on the growth of zinc oxide, zinc sulfide, and cadmium sulfide on substrates of silicon or gallium arsenide, then progressing to homoepitaxial growth of these materials as well as growth of zinc telluride and cadmium telluride. Metal-organic chemical vapor deposition (MOCVD) and chemical beam epitaxy (CBE) are important processes for the growth of thin films of compound semiconductors. In this study, basic processes relevant to the application of these methods to the production of films of II-VI semiconductors are studied. These particular semiconductor are important because they form the interface that interconverts optical and electronic signals.