Japan (JSPS) Postdoctoral Program: Basic Mechanisms of Semiconductor Processing Technologies

该奖项将提供补充支持，使保罗博士 伊利诺伊大学的Fons进行合作 与大学的Teruaki Motooka博士进行了为期12个月的研究 Tsukuba，日本 他们将研究的基本机制， 非晶硅在晶体硅上固相外延 以及二氧化硅/硅界面的物理学。 半导体处理技术正变得越来越多 这取决于对非平衡固体的详细理解- 相界面和生长机制。 本研究将尝试 为了使用拉曼光谱表征界面性质， 时间分辨椭圆偏振法和电学测量。 界面结构将使用分子轨道 分子动力学计算。 本冈博士的 界面结构理论分析经验 并熟练解释相关实验数据 应该补充和集中冯博士的广泛背景， 冶金学、固体物理学、固体器件和计算机 模拟

This award will provide supplementary support to enable Dr. Paul Fons of the University of Illinois to conduct collaborative research for 12 months with Dr. Teruaki Motooka of the University of Tsukuba, Japan. They will investigate the basic mechanisms of solid-phase epitaxy of amorphous silicon on crystalline silicon and the physics of silica/silicon interfaces. Semiconductor processing technologies are becoming increasing dependent on a detailed understanding of non-equilibrium solid- phase interfaces and growth mechanisms. This study will attempt to characterize interfacial properties using Raman spectroscopy, time-resolved ellipsometry, and electrical measurements. Interfacial structure will be modeled using both Molecular-Orbital and Molecular Dynamics calculations. Dr. Motooka's extensive experience with the theoretical analysis of interface structure and proficiency in the interpretation of related experimental data should complement and focus Dr. Fon's broad background in metallurgy, solid-state physics, solid-state devices, and computer simulations.