Japan (JSPS) Postdoctoral Program: Basic Mechanisms of Semiconductor Processing Technologies

日本（JSPS）博士后项目：半导体加工技术的基本机制

• 批准号: 9001556
• 负责人: Paul Fons
• 金额: $ 0.42万
• 依托单位: University of Illinois at Urbana-Champaign
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-05-15 至 1992-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9001556&HistoricalAwards=false
• 关键词: Japan; JSPS; Postdoctoral; Program; Basic

This award will provide supplementary support to enable Dr. Paul Fons of the University of Illinois to conduct collaborative research for 12 months with Dr. Teruaki Motooka of the University of Tsukuba, Japan. They will investigate the basic mechanisms of solid-phase epitaxy of amorphous silicon on crystalline silicon and the physics of silica/silicon interfaces. Semiconductor processing technologies are becoming increasing dependent on a detailed understanding of non-equilibrium solid- phase interfaces and growth mechanisms. This study will attempt to characterize interfacial properties using Raman spectroscopy, time-resolved ellipsometry, and electrical measurements. Interfacial structure will be modeled using both Molecular-Orbital and Molecular Dynamics calculations. Dr. Motooka's extensive experience with the theoretical analysis of interface structure and proficiency in the interpretation of related experimental data should complement and focus Dr. Fon's broad background in metallurgy, solid-state physics, solid-state devices, and computer simulations.

该奖项将为伊利诺伊大学的Paul Fons博士与日本筑波大学的Teruaki Motooka博士开展为期12个月的合作研究提供补充支持。他们将研究非晶硅在晶体硅上固相外延的基本机制以及二氧化硅/硅界面的物理性质。半导体加工技术越来越依赖于对非平衡固相界面和生长机制的详细了解。本研究将尝试使用拉曼光谱、时间分辨椭偏仪和电测量来表征界面性质。界面结构将使用分子轨道和分子动力学计算来建模。Motooka博士在界面结构理论分析方面的丰富经验，以及对相关实验数据解释的熟练程度，将补充和突出Fon博士在冶金、固态物理、固态器件和计算机模拟方面的广泛背景。