RUI: Electronic Properties of Amorphous Hydrogenated Silicon-Carbon Alloys

RUI：非晶氢化硅碳合金的电子性能

• 批准号: 9002942
• 负责人: John Essick
• 金额: $ 9.5万
• 依托单位: Occidental College
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-10-15 至 1994-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9002942&HistoricalAwards=false
• 关键词: RUI; Electronic; Properties; Amorphous; Hydrogenated

This research involves the investigation of amorphous hydrogenated silicon-carbon alloys by a combination of junction capacitance techniques. The intention is to study the detailed energy map of amorphous hydrogenated silicon-carbon films deep defect density-of-states (DOS) over a significant portion of the mobility gap. Photocapacitance spectrocopy will provide an accurate energy map of deep defects to a depth of 1.1 eV below the mobility edge. A series of high quality samples will be prepared by Shing of the Jet Propulsion Laboratory employing a Glasstech PECVD system. The research will involve undergraduates in every aspect of the proposed study. Initial measurements will involve capacitance-temperature measurements. This work will aid in the development of optoelectronic devices such as photovoltaic cells.

本研究涉及非晶 氢化硅-碳合金结合结 电容技术 目的是研究详细的 非晶氢化硅碳薄膜的深能级分布 缺陷态密度（DOS）在一个显着的一部分， 流动性差距。 光电容光谱学将提供一个 深度为1.1 eV以下的深层缺陷的精确能量图 流动性边缘。 一系列高质量的样品将在 由喷气推进实验室的Shing使用 PECVD系统。 这项研究将涉及本科生 在研究的各个方面。 初步测量结果将 涉及电容-温度测量。 这项工作将有助于 在光电器件的开发中 细胞