RUI: Electronic Properties of Amorphous Hydrogenated Silicon-Carbon Alloys

本研究涉及非晶 氢化硅-碳合金结合结 电容技术 目的是研究详细的 非晶氢化硅碳薄膜的深能级分布 缺陷态密度（DOS）在一个显着的一部分， 流动性差距。 光电容光谱学将提供一个 深度为1.1 eV以下的深层缺陷的精确能量图 流动性优势。 一系列高质量的样品将在 由喷气推进实验室的Shing使用 PECVD系统。 这项研究将涉及本科生 在研究的各个方面。 初步测量结果将 涉及电容-温度测量。 这项工作将有助于 在光电器件的开发中 细胞

This research involves the investigation of amorphous hydrogenated silicon-carbon alloys by a combination of junction capacitance techniques. The intention is to study the detailed energy map of amorphous hydrogenated silicon-carbon films deep defect density-of-states (DOS) over a significant portion of the mobility gap. Photocapacitance spectrocopy will provide an accurate energy map of deep defects to a depth of 1.1 eV below the mobility edge. A series of high quality samples will be prepared by Shing of the Jet Propulsion Laboratory employing a Glasstech PECVD system. The research will involve undergraduates in every aspect of the proposed study. Initial measurements will involve capacitance-temperature measurements. This work will aid in the development of optoelectronic devices such as photovoltaic cells.