RUI: Electronic Properties of Amorphous Hydrogenated Silicon-Carbon Alloys

本研究结合结电容技术对非晶态氢化硅碳合金进行了研究。我们的目的是研究非晶态氢化硅-碳薄膜在很大一部分迁移率带隙上的深缺陷态密度(DOS)的详细能量图。光电容光谱仪将提供深缺陷的准确能量图，深度低于迁移率边缘1.1 eV。喷气推进实验室的Shing将使用Glasstech PECVD系统制备一系列高质量的样品。这项研究将涉及到拟议研究的各个方面的本科生。初始测量将包括电容-温度测量。这项工作将有助于光伏电池等光电子器件的发展。

This research involves the investigation of amorphous hydrogenated silicon-carbon alloys by a combination of junction capacitance techniques. The intention is to study the detailed energy map of amorphous hydrogenated silicon-carbon films deep defect density-of-states (DOS) over a significant portion of the mobility gap. Photocapacitance spectrocopy will provide an accurate energy map of deep defects to a depth of 1.1 eV below the mobility edge. A series of high quality samples will be prepared by Shing of the Jet Propulsion Laboratory employing a Glasstech PECVD system. The research will involve undergraduates in every aspect of the proposed study. Initial measurements will involve capacitance-temperature measurements. This work will aid in the development of optoelectronic devices such as photovoltaic cells.