Research Initiation Grant: An Efficient and Comprehensive Transport Model for Semiconductor Device Analysis

研究启动资助：用于半导体器件分析的高效且全面的传输模型

• 批准号: 9010457
• 负责人: Neil Goldsman
• 金额: $ 6万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1993-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9010457&HistoricalAwards=false
• 关键词: Research; Initiation; Grant; Efficient; Comprehensive

Effects of electron transport dominate semiconductor device behavior. The main objective of the proposed research is to develop a comprehensive, physically accurate transport model, which is suitable for efficient numerical evaluation. The model will integrate two approaches for characterizing electron transport: the Legendre polynomial technique, and the energy transport method. In addition to determining current densities and electric potentials, when fully realized, the model will allow for rapid calculation of the electron distribution function throughout a device. Initial studies will focus on numerically solving the homogeneous Boltzmann transport equation, using Legendre polynomials, while incorporating the effects of phonon scattering, one non-parabolic conduction band, and impact ionization. The model will then be used to calculate currents generated by ionization in MOSFETs. Next, the effect of several conduction bands will be introduced. Finally, the effect of nonlinear electron-electron scattering will be accounted for by using Fokker Plank formulation. Spatial dependence will be obtained by evaluating the energy balance equation to determine the space-dependent average electron energy. The space-dependent distribution function will then be determined by simultaneous solutions of the energy balance equation and the homogeneous Boltzmann equation. This study will facilitate a better understanding of the physical phenomena which affect submicron device operation, and is well suited for applications in CAD.

电子输运的影响主导半导体器件的行为。研究的主要目的是建立一个全面的、物理精确的输运模型，该模型适合于有效的数值评估。该模型将集成表征电子传递的两种方法：勒让德多项式技术和能量传递方法。除了确定电流密度和电势外，当完全实现时，该模型将允许快速计算整个设备的电子分布函数。最初的研究将集中在数值解齐次玻尔兹曼输运方程上，使用勒让德多项式，同时考虑声子散射、一个非抛物传导带和撞击电离的影响。该模型将用于计算mosfet中电离产生的电流。接下来，我们将介绍几种导带的作用。最后，用Fokker - Plank公式解释了非线性电子-电子散射的影响。通过计算能量平衡方程来确定空间依赖的平均电子能量，从而获得空间依赖。空间相关的分布函数将由能量平衡方程和齐次玻尔兹曼方程的同时解来确定。这项研究将有助于更好地理解影响亚微米器件运行的物理现象，并且非常适合在CAD中的应用。