Semiconductor Device Modeling by Deterministic Self-Consistent Solution to the Poisson and Boltzmann Transport Equations

我们正在开发一种通过泊松方程和玻尔兹曼输运方程（BTE）的直接自洽解来模拟器件的新方法。该方法将快速计算出半导体器件的动量分布函数。为了求解BTE，将分布函数表示为准无限球谐（SH）展开，其中未知系数取决于能量和位置。为了找到系数，将BTE投影到SH基上得到一个任意高阶方程系统。然后对系统进行数值求解，得到系数，从而得到器件分布函数。＊＊＊

9314084 Goldsman We are developing a new approach to device simulation by direct, self-consistent solution of the Poisson equation and the Boltzmann transport equation (BTE). The method will quickly calculate the momentum distribution function for a semiconductor device. To solve the BTE, the distribution function will be expressed as a quasi-infinite spherical harmonic (SH) expansion, with unknown coefficients that depend on energy and position. To find the coefficients, a system of arbitrarily high-order equations will be obtained by projecting the BTE onto the SH basis. The system will then be solved numerically to yield the coefficients and thereby the device distribution function. ***