Semiconductor Device Modeling by Deterministic Self-Consistent Solution to the Poisson and Boltzmann Transport Equations

通过泊松和玻尔兹曼传输方程的确定性自洽解进行半导体器件建模

• 批准号: 9314084
• 负责人: Neil Goldsman
• 金额: $ 34.47万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-02-01 至 1998-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9314084&HistoricalAwards=false
• 关键词: Semiconductor; Device; Modeling; Deterministic; Self

9314084 Goldsman We are developing a new approach to device simulation by direct, self-consistent solution of the Poisson equation and the Boltzmann transport equation (BTE). The method will quickly calculate the momentum distribution function for a semiconductor device. To solve the BTE, the distribution function will be expressed as a quasi-infinite spherical harmonic (SH) expansion, with unknown coefficients that depend on energy and position. To find the coefficients, a system of arbitrarily high-order equations will be obtained by projecting the BTE onto the SH basis. The system will then be solved numerically to yield the coefficients and thereby the device distribution function. ***

9314084 Goldsman我们正在开发一种新的方法，通过泊松方程和玻尔兹曼输运方程（BTE）的直接自洽解来进行器件模拟。 该方法将快速计算半导体器件的动量分布函数。 为了求解BTE，分布函数将被表示为准无限球谐（SH）展开，其中未知系数取决于能量和位置。 为了找到系数，将通过将BTE投影到SH基上来获得任意高阶方程的系统。 然后将数值求解该系统以产生系数，从而产生器件分布函数。 ***