Fundamental Limits to the Performance of InP-Based Monolithic Integrated Receivers

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This grant is for numerous optical system architectures for transmission and manipulation of data require common device structures which have been difficult to attain because of stringent demands such structures place on the materials growth capabilities presently available. Chief among these devices are photoreceivers which combine a photodetection element, such as a photodiode or photoconductor, with a preamplifier. Success with such "building-block" circuits is essential if more sophisticated, more highly functional monolithic integrated optoelectronic circuits are to be realized. In this award a program will be aimed at systematically addressing several of the most fundamental issues involved in fabricating high-performance, monolithic photoreceivers and receiver arrays based on InP and related materials. High bandwidth, highly functional monolithic photoreceivers will be designed, fabricated, and tested for use in both high density and wide bandwidth system architectures. Several transistor and circuit configurations will be optimized for these applications using both a theoretical and empirical approach. The completed monolithic receivers will be utilized in optical system experiments. This project is a renewal of a previous three year NSF funded program, and significantly extends prior results toward the understanding of the limits of receiver performance.