Industry Internship: Manufacturability Studies of Metal Oxide Semiconductor Field Effect Transition

行业实习：金属氧化物半导体场效应转变的可制造性研究

• 批准号: 9015656
• 负责人: Lakshmi Munukutla
• 金额: $ 1.21万
• 依托单位: Arizona State University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1992-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9015656&HistoricalAwards=false
• 关键词: Industry; Internship; Manufacturability; Studies; Metal

The major thrust of this research is to develop a process for fabricating metal oxide semiconductor transistors on a silicon-germanium alloy epitaxial strained-layer, since such transistors are significantly faster than comparable silicon devices. The knowledge and understanding of silicon- germanium/silicon and silicon dioxide/silicon-germanium interfacial properties are crucial to the metal oxide semiconductor field effect transistor fabrication. First, silicon-germanium strained epitaxial layer will be grown on silicon using chemical vapor deposition process. The thermal oxide with thicknesses ranging from 250 to 500 Angstroms will be grown in a dry oxygen ambient. At this stage a few sample wafers will be subjected to high resolution transmission electron microscopy analysis to determine the misfit dislocation density at the silicon-germanium/silicon interface and the planarity of silicon dioxide/silicon-germanium interface. Metal oxide semiconductor capacitor structures will be fabricated on the remaining wafers and after metallization, quasi-static capacitance-voltage measurements will be taken to extract fixed charge density and interface trap charges. This work should lay the foundation to the manufacturability of metal oxide semiconductor field effect transistors on silicon- germanium/silicon alloys.

这项研究的主要目的是开发一种方法， 用于在衬底上制造金属氧化物半导体晶体管， 硅锗合金外延应变层，因为这种 晶体管的速度明显快于硅晶体管 装置. 对硅的认识和理解- 锗/硅和二氧化硅/硅-锗 界面性质对于金属氧化物是至关重要的 半导体场效应晶体管制造 第一、 硅锗应变外延层将生长在 硅使用化学气相沉积工艺。 热 厚度范围为250至500埃的氧化物将被 在干燥的氧气环境中生长。 在这个阶段，一些样品晶圆 将受到高分辨率透射电子 显微镜分析以确定错配位错密度 在硅-锗/硅界面处和 二氧化硅/硅锗界面。 金属氧化物 半导体电容器结构将在 剩余晶片和金属化后，准静态 电容-电压测量将被用来提取固定的 电荷密度和界面陷阱电荷。 这项工作为可制造性打下了基础 硅上的金属氧化物半导体场效应晶体管- 锗/硅合金