NSF Fort Monmouth Cooperative Program: Picosecond Photo- conductors on MBE Grown Materials for High Speed/High Fre- quency Microelectronics.

NSF 蒙茅斯堡合作项目：MBE 生长材料上的皮秒光电导体，用于高速/高频微电子学。

• 批准号: 9016028
• 负责人: Chi Lee
• 金额: $ 7.39万
• 依托单位: University of Maryland, College Park
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-07-01 至 1992-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9016028&HistoricalAwards=false
• 关键词: NSF; Fort; Monmouth; Cooperative; Program

We propose a collaborative research project between the Army Electronics Technology and Devices Laboratory (ETDL) at Fort Monmouth and the University of Maryland. It focuses on the development of integrating picosecond photoconductors directly onto the MBE based microelectronic chip. The specific research tasks under this program include: (1) Developing MBE material based picosecond photoconductors for on chip waveform generation and measurement and comparing their performance with those fabricated directly on semi-insulating GaAs substrates. (2) Using picosecond optical characterization to study MBE material electronic properties, carrier dynamics, and the effect of metallization, such as the thickness of the metal strip, on the picosecond electric pulse generation and propagation. (3) Characterizing the ps photoconductors based on low temperature MBE grown GaAs. (4) Making S parameter measurements on the coplanar microstrip transmission line to study the millimeter-wave propagation characteristics.

我们建议在蒙茅斯堡的陆军电子技术和设备实验室(ETDL)和马里兰大学之间开展一个合作研究项目。其重点是将皮秒光导体直接集成到基于分子束外延的微电子芯片上的开发。本项目的具体研究任务包括：(1)研制基于MBE材料的片内皮秒级光导体波形的产生和测量，并与直接在半绝缘砷化镓衬底上制作的波形进行性能比较。(2)利用皮秒光学特性研究了分子束外延材料的电学性质、载流子动力学和金属化效应，如金属带材的厚度，对皮秒电脉冲的产生和传播。(3)对基于低温分子束外延生长的GaAs光电导进行了表征。(4)在共面微带传输线上进行S参数测量，研究毫米波的传播特点。