NSF Fort Monmouth Cooperative Program: Picosecond Photo- conductors on MBE Grown Materials for High Speed/High Fre- quency Microelectronics.

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We propose a collaborative research project between the Army Electronics Technology and Devices Laboratory (ETDL) at Fort Monmouth and the University of Maryland. It focuses on the development of integrating picosecond photoconductors directly onto the MBE based microelectronic chip. The specific research tasks under this program include: (1) Developing MBE material based picosecond photoconductors for on chip waveform generation and measurement and comparing their performance with those fabricated directly on semi-insulating GaAs substrates. (2) Using picosecond optical characterization to study MBE material electronic properties, carrier dynamics, and the effect of metallization, such as the thickness of the metal strip, on the picosecond electric pulse generation and propagation. (3) Characterizing the ps photoconductors based on low temperature MBE grown GaAs. (4) Making S parameter measurements on the coplanar microstrip transmission line to study the millimeter-wave propagation characteristics.