Expedited Award for Novel Research: Piosecond Photoconduc- tors on MBE Grown Materials for High Speed Microelectronics

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The PI proposes to integrate the piosecond photoconductors directly on the microelectronic devices made from semiconductor quantum wells and superlatives. This effort will collaborate with the Army Electronics Technology and Device Laboratory (ETDL) to develop efficient piosecond photoconductors on MBE materials and to devise on-chip piosecond measurement techniques for high speed electronic devices.