Fort Monmouth Interaction: Picosecond Photoconductors on MBE Grown Materials for High Speed Microelectronics

PI将把皮秒光导体直接集成到由半导体量子阱和超晶格制成的微电子设备上。这是与陆军电子技术和设备实验室(ETDL)的合作，目的是在MBE材料上开发高效的皮秒光导体，并设计用于高速电子设备的芯片上皮秒测量技术。这是对最初由“新奇研究快速奖”计划授予的一项拨款的续签支持的请求。

The PI will integrate the picosecond photoconductors directly onto the microelectronic devices made from semiconductor quantum wells and superlattices. This is a collaboration with the Army Electronics Technology and Device Laboratory (ETDL) to develop efficient picosecond photoconductors on MBE materials and to devise on-chip picosecond measurement techniques for high speed electronic devices. This is a request for renewal support of a grant originally awarded by the "expedited awards for novel research" program.