Fort Monmouth Interaction: Picosecond Photoconductors on MBE Grown Materials for High Speed Microelectronics

PI将把皮秒光电导体直接集成到 由半导体量子威尔斯制成的微电子器件， 超晶格 这是一个与陆军电子公司合作的项目 技术和设备实验室（ETDL）开发高效的 MBE材料上的皮秒光电导体并在芯片上设计 用于高速电子设备的皮秒测量技术。 这是一个申请，要求重新支持最初由 “快速创新研究奖”项目

The PI will integrate the picosecond photoconductors directly onto the microelectronic devices made from semiconductor quantum wells and superlattices. This is a collaboration with the Army Electronics Technology and Device Laboratory (ETDL) to develop efficient picosecond photoconductors on MBE materials and to devise on-chip picosecond measurement techniques for high speed electronic devices. This is a request for renewal support of a grant originally awarded by the "expedited awards for novel research" program.