Fort Monmouth Interaction: Picosecond Photoconductors on MBE Grown Materials for High Speed Microelectronics

PI将把皮秒光导体直接集成到由半导体量子阱和超晶格制成的微电子器件上。该项目与陆军电子技术与设备实验室（ETDL）合作，在MBE材料上开发高效皮秒光导体，并为高速电子设备设计片上皮秒测量技术。这是对最初由“新颖研究加速奖励”计划授予的拨款的续期支持请求。

The PI will integrate the picosecond photoconductors directly onto the microelectronic devices made from semiconductor quantum wells and superlattices. This is a collaboration with the Army Electronics Technology and Device Laboratory (ETDL) to develop efficient picosecond photoconductors on MBE materials and to devise on-chip picosecond measurement techniques for high speed electronic devices. This is a request for renewal support of a grant originally awarded by the "expedited awards for novel research" program.