U.S.-Brazil Cooperative Research on Plasma Processing of Semi-Conductors

该奖项支持等离子体加工方面的合作研究 作为一个合作研究项目 喷气推进实验室的Santosh Srivastava，G. G. B。deSouza和A. C. de A. e.联邦大学的苏扎 里约热内卢和我联邦大学的伊加说， 圣卡洛斯（UFSCar），巴西. 这三个小组将产生 电子碰撞碰撞交叉的补充数据 低温下感兴趣的分子部分 等离子体沉积半导体材料的蚀刻。 低密度等离子体沉积和刻蚀技术， 用于微电子领域。 一般来说，气体 在这些等离子体中的压力是这样的， 分子从10.9到10.12 cm-3变化，电子能量 范围从1 ev到103 v。 它们是高度非热的， 主要是电子碰撞过程决定了 性格 因此，为了模拟这些等离子体， 几种不同类型的电子碰撞的知识 并且光吸收截面是重要的。 为了表征所有重要的物理性质 与电子撞击分子形成离子有关 现在的兴趣是必须了解离子的所有三个方面 上一节讨论的形成，即i）绝对 电子形成离子的截面值 光电离截面和离子-离子 符合，和iii）碎片的动能谱 离子。 在喷气推进实验室， 用于测量横截面的绝对值， 电子碰撞能量范围从阈值到1 KeV。 在 UFRJ Drs. G. G. B。deSouza和A. C. de A. e Souza have 建立的技术和仪器的研究 第二个方面。 在UFSCar，Ione伊加博士、Lee Mu Tao博士和 何塞卡洛斯诺盖拉有测量仪器 碎片离子的动能。 因此，工作 三个小组的表演将是免费的。 一 合作努力已经产生了重要的数据 关于目前感兴趣的分子，并将继续 在未来这样做。

This award supports cooperative research on plasma processing of semi conductors as a collaborative research program between Santosh Srivastava of Jet Propulsion Laboratory, G. G. B. deSouza and A. C. de A. e Souza of the Federal University of Rio de Janeiro and I. Iga, of the Federal University of Sao Carlos (UFSCar), Brazil. The three groups will generate complementary data on the electron impact collision cross section for molecules of interest in the low temperature plasma deposition an etching of semi-conducting materials. The technique of low density plasma deposition and etching is used in the field of micro-electronics. Typically, gas pressures in these plasmas are such that number densities of molecules vary from 10.9 to 10.12 cm-3 and electron energies range from 1 ev to 10 3v. They are highly non-thermal and mainly the electron collision processes determine their character. Therefore, for modeling these plasmas an accurate knowledge of several different types of electron collision and photo-absorption cross section is important. In order to characterize all important physical properties related to ion formation by electron impact on molecules of present interest one has to know all three aspects of ion formation discussed in the previous section i.e. i) absolute values of cross sections for the ion formation by electron impact ii) photoionization cross sections and ion-ion coincidences, and iii) kinetic energy spectrum of fragment ions. At JPL the proposer has expertise and instrumentation for the measurement of absolute values of cross sections in the electron impact energy range from threshold to 1 KeV. At UFRJ Drs. G. G. B. deSouza and A. C. de A. e Souza have established techniques and instrumentation for the study of the second aspect. At UFSCar Drs. Ione Iga, Lee Mu Tao, and Jose Carlos Nogueira have instrumentation for the measurement of the kinetic energy of the fragment ions. Thus, the work performed by the three groups will be complimentary. A collaborative effort has already generated important data concerning molecules of present interest and will continue to do so in the future.