Effect of Low Temperature Processing on Polysilicon Thin Film Transistors Characteristics

建议的工作是研究薄硅膜上 熔点相对较低的玻璃。 多晶硅是一种 半导体可以用来制造晶体管。 低 多晶硅的高温（550 ℃）处理开辟了新的领域 例如用于大面积显示器的电子产品， 图像. 然而，由于材料是沉积的，而不是 生长成单晶并切成圆片， 可以考虑多层次的三维概念 由于较低的处理温度允许 层之间的兼容性。 将开发CMOS电路 以及针对垂直整合的多层次方面。

The proposed work is for research of thin silicon films on relatively low melting point glass. Polycrystalline silicon is a semiconductor which can be used to fabricate transistors. Low temperature (550 C) processing of polysilicon opens up new areas of application such as electronics for large-area displays and images. However, because the material is deposited rather than grown as a single crystal and cut into wafers, it makes it possible to consider concepts of multi-level three dimensional integration since lower processing temperatures allow for compatibility between layers. CMOS circuitry will be developed and multi-level aspects addressed for vertical integration.