Epitaxial CrSi2/Si Heterostructures and Infrared Detectors

本研究的目的是探讨窄禁带 半导体硅化物CrSi 2。 的目标 本工作是对金属/CrSi_2 接触和CrSi 2/Si异质结， 演示和测量红外 CrSi 2薄膜的光电导响应， 确定硅上CrSi 2膜的电位， 红外探测器技术 这项研究是一项基于实验的研究。 CrSi_2外延薄膜研究 在硅晶片衬底上。 增长将是 使用多功能的“硅MBE”型 成长系统 将制造器件结构 用于表征红外光响应。 这些测量将包括光谱 膜的光电导性的依赖性，以及 肖特基势垒红外光响应 在CrSi 2膜内制成的探测器。强 重点将放在控制电影 微观结构，并了解其对 观察到的光电特性。 我们打算展示增长和 外延半导体硅化物的性质 单晶衬底。 我们将描述两个 新型本征半导体红外探测器 其可以单片集成在硅上 微电子芯片

This proposal is to investigate the narrow bandgap semiconducting silicide CrSi2. The goals of the work are to characterize electrically metal/CrSi2 contacts and CrSi2/Si heterojunctions, to demonstrate and measure the infrared photoconductive response of CrSi2 thin films, and to determine the potential of CrSi2 films on Si as an infrared detector technology. The proposed research is an experimentally-based investigation of CrSi2 grown as epitaxial thin films on silicon wafer substrates. Growths will be performed with a versatile "Silicon MBE"-type growth system. Device structures will be fabricated for characterization of the infrared photoresponse. These measurements will include the spectral dependence of photoconductivity of the films, and the photoresponse of a Schottky barrier infrared detector made within the CrSi2 film. Strong emphasis will be placed on controlling the films microstructure, and understanding its influence on the observed photoelectronic properties. We intend to demonstrate the growth and properties of an epitaxial semiconducting silicide on a single-crystal substrate. We will characterize two new intrinsic semiconducting infrared detectors which may be monolithically integrated on a silicon microelectronic chip.