Rhenium-Molybdenum Silicide Narrow Bandgap Semiconductors

铼钼硅化物窄带隙半导体

• 批准号: 9021507
• 负责人: John Mahan
• 金额: $ 19.53万
• 依托单位: Colorado State University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-07-01 至 1995-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9021507&HistoricalAwards=false
• 关键词: Rhenium; Molybdenum; Silicide; Narrow; Bandgap

This project explores the potential of narrow bandgap semiconductors such as rhenium(Rh) molybdenum(Mo) silicide for use as a silicon microelectronics compatible wavelength adjustable infrared sensitive detector material. Determining the compositional (Rh, Mo) dependence of the bandgap value, and the influence of epitaxial crystal growth parameters on the microstructure of the films are major goals. Thin films of Rh and Mo will be deposited in stoichiometric proportions by e-beam evaporation onto silicon substrates. Silicide formation will be completed through thermally driven solid state reactions by two distinct modes--reactive deposition epitaxy, and solid phase epitaxy. The films will be evaluated by electron and x-ray spectroscopies, and the type of bandgap and its value will be determined by comparing optical data to theoretical models. This work, by providing information on fundamental materials synthesis, processing, and physical properties, is expected to lay the foundation for development of monolithically integrated silicon based intrinsic infrared detector prototypes suitable for use in the 8-14 micron wavelength range.

该项目探索窄带隙半导体（例如铼（Rh）硅化钼（Mo））用作硅微电子兼容波长可调红外敏感探测器材料的潜力。 主要目标是确定带隙值的成分（Rh、Mo）依赖性以及外延晶体生长参数对薄膜微观结构的影响。 Rh 和 Mo 薄膜将通过电子束蒸发以化学计量比例沉积到硅基板上。 硅化物的形成将通过两种不同模式——反应沉积外延和固相外延——的热驱动固态反应来完成。 这些薄膜将通过电子和 X 射线光谱进行评估，并通过将光学数据与理论模型进行比较来确定带隙的类型及其值。 这项工作通过提供有关基本材料合成、加工和物理特性的信息，预计将为开发适用于 8-14 微米波长范围的单片集成硅基本征红外探测器原型奠定基础。