Rhenium-Molybdenum Silicide Narrow Bandgap Semiconductors

该项目探索了窄禁带半导体，如Re(Rh)Mo(Mo)硅化物用作硅微电子兼容波长可调红外敏感探测器材料的潜力。确定(Rh，Mo)组分对带隙的依赖关系，以及外延晶体生长参数对薄膜微结构的影响是主要目标。Rh和Mo薄膜将通过电子束蒸发在硅衬底上按化学计量比沉积。硅化物的形成将通过两种不同的模式--反应沉积外延和固相外延--通过热驱动的固相反应完成。薄膜将通过电子和X射线光谱仪进行评估，带隙类型及其值将通过比较光学数据和理论模型来确定。这项工作通过提供基本材料的合成、加工和物理性能方面的信息，有望为开发适用于8-14微米波长范围的单片集成硅基本征红外探测器原型奠定基础。

This project explores the potential of narrow bandgap semiconductors such as rhenium(Rh) molybdenum(Mo) silicide for use as a silicon microelectronics compatible wavelength adjustable infrared sensitive detector material. Determining the compositional (Rh, Mo) dependence of the bandgap value, and the influence of epitaxial crystal growth parameters on the microstructure of the films are major goals. Thin films of Rh and Mo will be deposited in stoichiometric proportions by e-beam evaporation onto silicon substrates. Silicide formation will be completed through thermally driven solid state reactions by two distinct modes--reactive deposition epitaxy, and solid phase epitaxy. The films will be evaluated by electron and x-ray spectroscopies, and the type of bandgap and its value will be determined by comparing optical data to theoretical models. This work, by providing information on fundamental materials synthesis, processing, and physical properties, is expected to lay the foundation for development of monolithically integrated silicon based intrinsic infrared detector prototypes suitable for use in the 8-14 micron wavelength range.