Rhenium-Molybdenum Silicide Narrow Bandgap Semiconductors

这个项目探索了窄禁带的潜力 半导体，如铑（Rh）钼（Mo）硅化物， 作为硅微电子兼容的波长可调的 红外敏感探测器材料。 确定 带隙值的成分（Rh，Mo）依赖性，以及 外延晶体生长参数的影响 膜的微结构是主要目标。 Rh薄膜和 Mo将通过电子束以化学计量比沉积 蒸发到硅衬底上。 硅化物的形成将是 通过热驱动的固态反应完成， 不同的模式--反应沉积外延和固相 外延生长 薄膜将通过电子和x射线进行评价 光谱，带隙的类型及其值将是 通过将光学数据与理论模型进行比较来确定。 这 工作，通过提供基本材料合成的信息， 加工和物理性能，预计将奠定 单片集成硅开发基金会 基于本征红外探测器原型， 8-14微米波长范围。

This project explores the potential of narrow bandgap semiconductors such as rhenium(Rh) molybdenum(Mo) silicide for use as a silicon microelectronics compatible wavelength adjustable infrared sensitive detector material. Determining the compositional (Rh, Mo) dependence of the bandgap value, and the influence of epitaxial crystal growth parameters on the microstructure of the films are major goals. Thin films of Rh and Mo will be deposited in stoichiometric proportions by e-beam evaporation onto silicon substrates. Silicide formation will be completed through thermally driven solid state reactions by two distinct modes--reactive deposition epitaxy, and solid phase epitaxy. The films will be evaluated by electron and x-ray spectroscopies, and the type of bandgap and its value will be determined by comparing optical data to theoretical models. This work, by providing information on fundamental materials synthesis, processing, and physical properties, is expected to lay the foundation for development of monolithically integrated silicon based intrinsic infrared detector prototypes suitable for use in the 8-14 micron wavelength range.