PYI: Advanced Transport in Semiconductor Structures

PI的研究兴趣集中在研究半导体材料中电荷输运的工具的开发和应用。这些工具在设计和分析新的高性能器件结构以及研究基本器件现象中是必不可少的。在PYI项目的过程中，PI将展示具有优化收集器结构的InP/InGaAs hbt，以显示由现场剖面产生的增强或扩展的速度超调效果。他们还将升级他们的模拟器，以处理应变层系统中的传输，这些系统在设备应用中显示出越来越大的希望。最近Joe Campbell教授和Russ Dupuis教授加入了微电子研究中心，极大地提升了他们的实验HBT能力。Dupuis团队将提供MOCVD生长层，Campbell团队将协助PI团队设计和制造的hbt进行高频测量和噪声分析。PI计划在该项目过程中进行的另一个研究领域是开发基于噪声测量的屏障传输特征的方法。这项工作将包括开发一个噪声测量模拟器（基于蒙特卡罗方法），还将包括对屏障传输和相关噪声的实验表征。这项工作的实验部分将与Dean Neikirk教授（PYI 1986，电气工程）合作完成。

The PI's research interests are centered around the development and application of tools for studying charge transport in semiconductor materials. Such tools are essential in the design and analysis of new high performance device structures and in the study of basic device phenomena. During the course of the PYI program, the PI's will demonstrate InP/InGaAs HBTs with collector structures optimized to show enhanced or extended velocity overshoot effects which result from field profiling. They will also upgrade their simulators to handle transport in the strained layer systems which are showing increased promise for device applications. The recent addition of Professors Joe Campbell and Russ Dupuis to the Microelectronics Research Center has provided a tremendous boost to their experimental HBT capabilities. Dupuis's group will provide the MOCVD grown layers and Campbell's group will assist in the high frequency measurement and noise analysis of the HBTs designed and fabricated by the PI's group. An additional area of research which the PI plans to pursue during the course of this program is the development of approaches to characterize barrier transport based on noise measurements. This work will involve both the development of a noise measurement simulator (based on the Monte Carlo approach), and will also involve experimental characterization of the barrier transport and related noise. The experimental portion of this work will be done in collaboration with Professor Dean Neikirk (PYI 1986, Electrical Engineering).