PYI: Advanced Transport in Semiconductor Structures

PYI：半导体结构中的先进传输

• 批准号: 9057633
• 负责人: Christine Maziar
• 金额: $ 31.25万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1990
• 资助国家: 美国
• 起止时间: 1990-09-01 至 1996-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9057633&HistoricalAwards=false
• 关键词: PYI; Advanced; Transport; Semiconductor; Structures

The PI's research interests are centered around the development and application of tools for studying charge transport in semiconductor materials. Such tools are essential in the design and analysis of new high performance device structures and in the study of basic device phenomena. During the course of the PYI program, the PI's will demonstrate InP/InGaAs HBTs with collector structures optimized to show enhanced or extended velocity overshoot effects which result from field profiling. They will also upgrade their simulators to handle transport in the strained layer systems which are showing increased promise for device applications. The recent addition of Professors Joe Campbell and Russ Dupuis to the Microelectronics Research Center has provided a tremendous boost to their experimental HBT capabilities. Dupuis's group will provide the MOCVD grown layers and Campbell's group will assist in the high frequency measurement and noise analysis of the HBTs designed and fabricated by the PI's group. An additional area of research which the PI plans to pursue during the course of this program is the development of approaches to characterize barrier transport based on noise measurements. This work will involve both the development of a noise measurement simulator (based on the Monte Carlo approach), and will also involve experimental characterization of the barrier transport and related noise. The experimental portion of this work will be done in collaboration with Professor Dean Neikirk (PYI 1986, Electrical Engineering).

PI的研究兴趣集中在开发和 研究半导体中电荷输运的工具的应用 材料. 这些工具在设计和分析新的 高性能器件结构和基础器件研究 现象。 在保华计划进行期间，主要研究者将展示 优化InP/InGaAs HBT集电极结构以增强 或由磁场引起的扩展速度过冲效应 侧写 他们还将升级他们的模拟器， 应变层系统中的传输显示出增加 设备应用的承诺。 最近增加的教授 Joe坎贝尔和Russ Dupuis到微电子研究中心 极大地推动了他们的实验性HBT 能力的 Dupuis的团队将提供MOCVD生长层， 坎贝尔的小组将协助进行高频测量， 对PI小组设计和制造的HBT进行了噪声分析。 PI计划在2010年期间进行的另一个研究领域 该计划的过程是方法的发展， 基于噪音测量来表征屏障传输。 这项工作 将涉及噪音测量模拟器的开发 （基于蒙特卡罗方法），还将涉及 实验表征的障碍运输和相关的 噪声 这项工作的实验部分将在 与Dean Neikirk教授合作（PYI 1986，电气 工程）。